Overview
The BAV70DXV6T5G is a monolithic dual switching diode with a common cathode configuration, manufactured by onsemi. This device is packaged in a small footprint SOT-563 6-pin package, making it suitable for a variety of applications where space is limited. The diodes are designed for low current rectification and switching applications, offering high reliability and performance. The BAV70DXV6T5G is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | VR | 100 | Vdc |
| Forward Current | IF | 200 | mAdc |
| Peak Forward Surge Current | IFM(surge) | 500 | mAdc |
| Total Device Dissipation (TA = 25°C) | PD | 357 (One Junction Heated), 500 (Both Junctions Heated) | mW |
| Derate above 25°C | - | 2.9 (One Junction Heated), 4.0 (Both Junctions Heated) | mW/°C |
| Thermal Resistance - Junction-to-Ambient | RJA | 350 (One Junction Heated), 250 (Both Junctions Heated) | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Reverse Breakdown Voltage | V(BR) | 100 | Vdc |
| Reverse Voltage Leakage Current | IR | 60 (VR = 25 Vdc, TJ = 150°C), 100 (VR = 100 Vdc) | µAdc |
| Diode Capacitance | CD | 1.5 | pF |
| Forward Voltage | VF | 715 (IF = 1.0 mAdc), 855 (IF = 10 mAdc), 1000 (IF = 50 mAdc), 1250 (IF = 150 mAdc) | mVdc |
| Reverse Recovery Time | trr | 6.0 | ns |
Key Features
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Dual common cathode configuration in a small footprint SOT-563 6-pin package.
- Low current rectification and switching capabilities.
- High reliability and performance in various operating conditions.
- Wide junction and storage temperature range (-55°C to +150°C).
Applications
- Low current rectification and switching applications.
- Automotive systems due to AEC-Q101 qualification and PPAP capability.
- Wearables and other portable devices where space is limited.
- General-purpose electronic circuits requiring reliable switching diodes.
Q & A
- What is the maximum reverse voltage rating of the BAV70DXV6T5G? The maximum reverse voltage rating is 100 Vdc.
- What is the maximum forward current rating of the BAV70DXV6T5G? The maximum forward current rating is 200 mAdc.
- Is the BAV70DXV6T5G RoHS compliant? Yes, the BAV70DXV6T5G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the package type of the BAV70DXV6T5G? The device is packaged in a SOT-563 6-pin package.
- What are the typical applications of the BAV70DXV6T5G? Typical applications include low current rectification, automotive systems, wearables, and general-purpose electronic circuits.
- What is the thermal resistance - junction-to-ambient of the BAV70DXV6T5G? The thermal resistance - junction-to-ambient is 350°C/W (one junction heated) and 250°C/W (both junctions heated).
- What is the reverse recovery time of the BAV70DXV6T5G? The reverse recovery time is 6.0 ns.
- Is the BAV70DXV6T5G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the junction and storage temperature range of the BAV70DXV6T5G? The junction and storage temperature range is -55°C to +150°C.
- What is the diode capacitance of the BAV70DXV6T5G? The diode capacitance is 1.5 pF.
