FDD9407L-F085
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onsemi FDD9407L-F085

Manufacturer No:
FDD9407L-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD9407L-F085 is a P-Channel PowerTrench MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling capabilities. It is part of onsemi's portfolio of automotive-grade MOSFETs, ensuring reliability and compliance with stringent automotive standards.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) -40 V
Gate-to-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) -100 A
Pulsed Drain Current - A
Single Pulse Avalanche Energy (EAS) 259 mJ
Power Dissipation (PD) 227 W
Derate Above 25°C 1.52 W/°C
Operating and Storage Temperature (TJ, TSTG) -55 to +175 °C
Thermal Resistance, Junction to Case (RθJC) 0.66 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 52 °C/W
Static Drain to Source On Resistance (RDS(on)) at VGS = -10 V, ID = -80 A 3.3 mΩ

Key Features

  • Typical RDS(on) = 3.3 mΩ at VGS = -10 V, ID = -80 A
  • UIS Capability
  • Qualified to AEC Q101
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant
  • Low on-resistance and high current handling capabilities
  • High thermal performance with low thermal resistance

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Power Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDD9407L-F085 MOSFET?

    The maximum drain-to-source voltage (VDSS) is -40 V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is -100 A.

  3. What is the typical on-resistance (RDS(on)) of the FDD9407L-F085 at VGS = -10 V and ID = -80 A?

    The typical on-resistance (RDS(on)) is 3.3 mΩ.

  4. Is the FDD9407L-F085 qualified to any automotive standards?

    Yes, it is qualified to AEC Q101.

  5. What is the operating temperature range of the FDD9407L-F085?

    The operating temperature range is -55°C to +175°C.

  6. What is the thermal resistance, junction to case (RθJC), of this MOSFET?

    The thermal resistance, junction to case (RθJC), is 0.66 °C/W.

  7. What are some common applications of the FDD9407L-F085 MOSFET?

    Common applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, and more.

  8. Is the FDD9407L-F085 Pb-Free, Halogen Free/BFR Free and RoHS Compliant?

    Yes, it is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.

  9. What is the package type of the FDD9407L-F085 MOSFET?

    The package type is DPAK3 (TO-252).

  10. What is the single pulse avalanche energy (EAS) rating of this MOSFET?

    The single pulse avalanche energy (EAS) rating is 259 mJ.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 80A, 4.5V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):227W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD9407L-F085 FDD9409L-F085 FDD9507L-F085 FDD9407-F085
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Last Time Buy Obsolete
FET Type N-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 90A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 4.5V 2.6mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 68 nC @ 10 V 130 nC @ 10 V 112 nC @ 10 V
Vgs (Max) ±20V ±20V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6700 pF @ 25 V 3360 pF @ 20 V 6250 pF @ 20 V 6390 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 227W (Tj) 150W (Tj) 227W (Ta) 227W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA D-PAK (TO-252) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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