Overview
The FDD9407-F085 is an N-Channel Power Trench® MOSFET produced by onsemi. This device is designed for high-power applications, offering a drain-to-source voltage (VDSS) of 40V and a continuous drain current (ID) of 100A. It features a low on-resistance (rDS(on)) of 1.6mΩ at VGS = 10V and ID = 80A, making it suitable for various automotive and industrial power management systems.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain to Source Voltage (VDSS) | ID = 250μA, VGS = 0V | 40 | - | - | V |
| Gate to Source Voltage (VGS) | - | - | ±20 | - | V |
| Continuous Drain Current (ID) | VGS=10V, TC = 25°C | 100 | - | - | A |
| Pulsed Drain Current | TC = 25°C | - | - | See Figure 4 | - |
| Single Pulse Avalanche Energy (EAS) | Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V | - | 171 | - | mJ |
| Power Dissipation (PD) | - | - | 227 | - | W |
| Operating and Storage Temperature (TJ, TSTG) | - | -55 to +175 | - | - | °C |
| Thermal Resistance Junction to Case (RθJC) | - | - | 0.66 | - | °C/W |
| Thermal Resistance Junction to Ambient (RθJA) | - | - | 52 | - | °C/W |
| Drain to Source On Resistance (rDS(on)) | ID = 80A, VGS= 10V, TJ = 25°C | - | 1.6 | 2 | mΩ |
Key Features
- Typical rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A
- Typical Qg(tot) = 86nC at VGS = 10V, ID = 80A
- UIS (Unclamped Inductive Switching) Capability
- RoHS Compliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- Powertrain Management
- Solenoid and Motor Drivers
- Electronic Steering
- Integrated Starter/Alternator
- Distributed Power Architectures and VRM
- Primary Switch for 12V Systems
Q & A
- What is the maximum drain-to-source voltage of the FDD9407-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 40V. - What is the continuous drain current rating of the FDD9407-F085?
The continuous drain current (ID) is 100A at VGS=10V and TC = 25°C. - What is the typical on-resistance of the FDD9407-F085?
The typical drain to source on resistance (rDS(on)) is 1.6mΩ at VGS=10V and ID=80A. - Is the FDD9407-F085 RoHS compliant?
Yes, the FDD9407-F085 is RoHS compliant. - What are the operating and storage temperature ranges for the FDD9407-F085?
The operating and storage temperature ranges are -55°C to +175°C. - What is the thermal resistance junction to case (RθJC) of the FDD9407-F085?
The thermal resistance junction to case (RθJC) is 0.66°C/W. - What are some common applications of the FDD9407-F085 MOSFET?
Common applications include automotive engine control, powertrain management, solenoid and motor drivers, electronic steering, integrated starter/alternator, and primary switch for 12V systems. - What is the single pulse avalanche energy (EAS) of the FDD9407-F085?
The single pulse avalanche energy (EAS) is 171mJ. - Is the FDD9407-F085 qualified to AEC Q101 standards?
Yes, the FDD9407-F085 is qualified to AEC Q101 standards. - What is the package type of the FDD9407-F085?
The package type is D-PAK (TO-252).
