Overview
The NSVBC817-16LT1G is a general-purpose NPN silicon transistor produced by onsemi. This transistor is part of the BC817 series, known for its reliability and versatility in various electronic applications. The NSV prefix indicates that this device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The transistor is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Collector Current - Continuous | IC | 500 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -65 to +150 | °C |
| DC Current Gain (IC = 100 mA, VCE = 1.0 V) | hFE | 100 - 160 | |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | 0.7 | V |
| Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) | VBE(on) | 1.2 | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High collector current of up to 500 mA.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V.
- Low base-emitter on voltage (VBE(on)) of 1.2 V.
- High current-gain bandwidth product (fT) of 100 MHz.
- Compact SOT-23 package.
Applications
The NSVBC817-16LT1G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems due to its AEC-Q101 qualification.
- General-purpose switching and amplification.
- Consumer electronics requiring high reliability and low power consumption.
- Industrial control systems.
- Audio and video equipment.
Q & A
- What is the maximum collector-emitter voltage of the NSVBC817-16LT1G transistor?
The maximum collector-emitter voltage (VCEO) is 45 V. - What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 500 mA. - Is the NSVBC817-16LT1G transistor RoHS compliant?
Yes, it is RoHS compliant, lead-free, and halogen-free. - What is the typical DC current gain (hFE) of this transistor?
The typical DC current gain (hFE) is between 100 and 160 at IC = 100 mA and VCE = 1.0 V. - What is the collector-emitter saturation voltage (VCE(sat)) of the NSVBC817-16LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V. - What is the base-emitter on voltage (VBE(on)) of this transistor?
The base-emitter on voltage (VBE(on)) is 1.2 V. - What is the current-gain bandwidth product (fT) of the NSVBC817-16LT1G?
The current-gain bandwidth product (fT) is 100 MHz. - In what package is the NSVBC817-16LT1G transistor available?
The transistor is available in the SOT-23 package. - Is the NSVBC817-16LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. - What are the junction and storage temperature ranges for this transistor?
The junction and storage temperature ranges are -65°C to +150°C.
