SBC817-40LT3G
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onsemi SBC817-40LT3G

Manufacturer No:
SBC817-40LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBC817-40LT3G is a general-purpose NPN silicon transistor manufactured by onsemi. This transistor is part of the BC817 and SBC817 series, known for their reliability and versatility in various electronic applications. The SBC817-40LT3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO45V
Collector-Base VoltageVCBO50V
Emitter-Base VoltageVEBO5.0V
Collector Current - ContinuousIC500mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C)PD225mW
DC Current Gain (IC = 100 mA, VCE = 1.0 V)hFE250
Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)VCE(sat)0.7V
Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V)VBE(on)1.2V
Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)fT100MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)Cobo10pF

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • High collector-emitter voltage (VCEO) of 45 V and collector-base voltage (VCBO) of 50 V.
  • Continuous collector current (IC) of 500 mA.
  • High DC current gain (hFE) of up to 600 at IC = 500 mA.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V.
  • Low base-emitter on voltage (VBE(on)) of 1.2 V.
  • High current-gain bandwidth product (fT) of 100 MHz.

Applications

The SBC817-40LT3G transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems due to its AEC-Q101 qualification.
  • General-purpose switching and amplification circuits.
  • Audio amplifiers and other low-power applications.
  • Industrial control systems.
  • Consumer electronics requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage rating of the SBC817-40LT3G transistor?
    The collector-emitter voltage (VCEO) is 45 V.
  2. Is the SBC817-40LT3G transistor RoHS compliant?
    Yes, it is Pb-free, halogen-free, and RoHS compliant.
  3. What is the maximum continuous collector current for the SBC817-40LT3G?
    The maximum continuous collector current (IC) is 500 mA.
  4. What is the DC current gain (hFE) of the SBC817-40LT3G transistor?
    The DC current gain (hFE) is up to 600 at IC = 500 mA.
  5. What is the collector-emitter saturation voltage (VCE(sat)) of the SBC817-40LT3G?
    The collector-emitter saturation voltage (VCE(sat)) is 0.7 V.
  6. What is the base-emitter on voltage (VBE(on)) of the SBC817-40LT3G?
    The base-emitter on voltage (VBE(on)) is 1.2 V.
  7. What is the current-gain bandwidth product (fT) of the SBC817-40LT3G?
    The current-gain bandwidth product (fT) is 100 MHz.
  8. Is the SBC817-40LT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable.
  9. What package type is the SBC817-40LT3G available in?
    The SBC817-40LT3G is available in a Pb-free SOT-23 package.
  10. How many units are typically shipped per reel for the SBC817-40LT3G?
    10,000 units per reel.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number SBC817-40LT3G SBC807-40LT3G SBC817-40LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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