Overview
The SBC817-40LT3G is a general-purpose NPN silicon transistor manufactured by onsemi. This transistor is part of the BC817 and SBC817 series, known for their reliability and versatility in various electronic applications. The SBC817-40LT3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 45 | V |
Collector-Base Voltage | VCBO | 50 | V |
Emitter-Base Voltage | VEBO | 5.0 | V |
Collector Current - Continuous | IC | 500 | mAdc |
Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
DC Current Gain (IC = 100 mA, VCE = 1.0 V) | hFE | 250 | |
Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | 0.7 | V |
Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) | VBE(on) | 1.2 | V |
Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 10 | pF |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- High collector-emitter voltage (VCEO) of 45 V and collector-base voltage (VCBO) of 50 V.
- Continuous collector current (IC) of 500 mA.
- High DC current gain (hFE) of up to 600 at IC = 500 mA.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V.
- Low base-emitter on voltage (VBE(on)) of 1.2 V.
- High current-gain bandwidth product (fT) of 100 MHz.
Applications
The SBC817-40LT3G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems due to its AEC-Q101 qualification.
- General-purpose switching and amplification circuits.
- Audio amplifiers and other low-power applications.
- Industrial control systems.
- Consumer electronics requiring reliable and efficient transistor performance.
Q & A
- What is the collector-emitter voltage rating of the SBC817-40LT3G transistor?
The collector-emitter voltage (VCEO) is 45 V. - Is the SBC817-40LT3G transistor RoHS compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant. - What is the maximum continuous collector current for the SBC817-40LT3G?
The maximum continuous collector current (IC) is 500 mA. - What is the DC current gain (hFE) of the SBC817-40LT3G transistor?
The DC current gain (hFE) is up to 600 at IC = 500 mA. - What is the collector-emitter saturation voltage (VCE(sat)) of the SBC817-40LT3G?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V. - What is the base-emitter on voltage (VBE(on)) of the SBC817-40LT3G?
The base-emitter on voltage (VBE(on)) is 1.2 V. - What is the current-gain bandwidth product (fT) of the SBC817-40LT3G?
The current-gain bandwidth product (fT) is 100 MHz. - Is the SBC817-40LT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable. - What package type is the SBC817-40LT3G available in?
The SBC817-40LT3G is available in a Pb-free SOT-23 package. - How many units are typically shipped per reel for the SBC817-40LT3G?
10,000 units per reel.