SBC817-16LT3G
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onsemi SBC817-16LT3G

Manufacturer No:
SBC817-16LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBC817-16LT3G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC817 series, known for its reliability and versatility in various electronic applications. The SBC817-16LT3G is designed to meet the requirements of automotive and other demanding applications, featuring AEC-Q101 qualification and PPAP capability. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Attribute Value Unit
Polarity NPN
Type General Purpose
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5.0 V
Collector Current (IC) 500 mA
Power Dissipation (PD) 300 mW
Collector-Emitter Saturation Voltage (VCE(sat)) 0.7 V
Base-Emitter On Voltage (VBE(on)) 1.2 V
DC Current Gain (hFE) 100 - 250
Transition Frequency (fT) 100 MHz
Operating Temperature Range -65°C to +150°C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • High collector current of up to 500 mA and collector-emitter voltage of up to 45 V.
  • Low collector-emitter saturation voltage of 0.7 V and base-emitter on voltage of 1.2 V.
  • High DC current gain (hFE) ranging from 100 to 250.
  • Transition frequency of 100 MHz, suitable for high-frequency applications.
  • Wide operating temperature range from -65°C to +150°C.
  • Compact SOT-23 package style, ideal for surface mount applications.

Applications

  • Automotive systems: Due to its AEC-Q101 qualification, it is widely used in automotive electronics such as sensors, actuators, and control units.
  • General-purpose amplifiers: Suitable for various amplification tasks in electronic circuits.
  • Switching circuits: Its high transition frequency and low saturation voltage make it ideal for switching applications.
  • Consumer electronics: Used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.
  • Industrial control systems: Applied in industrial automation and control systems where robust and reliable components are necessary.

Q & A

  1. What is the polarity of the SBC817-16LT3G transistor?

    The SBC817-16LT3G is an NPN bipolar junction transistor.

  2. What is the maximum collector-emitter voltage (VCEO) of the SBC817-16LT3G?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  3. What is the maximum collector current (IC) of the SBC817-16LT3G?

    The maximum collector current (IC) is 500 mA.

  4. Is the SBC817-16LT3G RoHS compliant?
  5. What is the operating temperature range of the SBC817-16LT3G?

    The operating temperature range is from -65°C to +150°C.

  6. What is the package style of the SBC817-16LT3G?

    The package style is SOT-23 (SC-59, TO-236).

  7. What is the transition frequency (fT) of the SBC817-16LT3G?

    The transition frequency (fT) is 100 MHz.

  8. Is the SBC817-16LT3G suitable for automotive applications?
  9. What is the collector-emitter saturation voltage (VCE(sat)) of the SBC817-16LT3G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.7 V.

  10. What is the base-emitter on voltage (VBE(on)) of the SBC817-16LT3G?

    The base-emitter on voltage (VBE(on)) is 1.2 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number SBC817-16LT3G SBC807-16LT3G SBC817-16LT3
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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