Overview
The BC817-25LT1G is an NPN Bipolar Transistor produced by onsemi, designed for use in both linear and switching applications. This transistor is housed in the SOT-23 (TO-236) package, which is suitable for lower power surface mount applications. It is part of the general-purpose and low VCE(sat) transistor family, making it versatile for various electronic designs.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 45 | V |
| Collector-Emitter Breakdown Voltage (VEB = 0, IC = 10 μA) | V(BR)CES | - | - | 50 | V |
| Emitter-Base Breakdown Voltage (IE = 1.0 μA) | V(BR)EBO | - | - | 5.0 | V |
| Collector Cutoff Current (VCB = 20 V, TA = 150°C) | ICBO | - | - | 100 nA | A |
| DC Current Gain (IC = 100 mA, VCE = 1.0 V) | hFE | 100 | 160 | 250 | - |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | - | - | 0.7 | V |
| Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) | VBE(on) | - | - | 1.2 | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 MHz | - |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 10 pF | - |
| Delay Time (VCC = 3.0 Vdc, VBE = 0.5 V, IC = 10 mA) | td | - | - | 85 ns | - |
| Rise Time (VCC = 3.0 Vdc, VBE = 0.5 V, IC = 10 mA) | tr | - | - | - | ns |
| Collector Current Continuous | IC Cont. | - | - | 100 mA | A |
| Power Dissipation (PTM) | PTM | - | - | 0.225 W | W |
Key Features
- Pb-Free Packages Available: The BC817-25LT1G is available in lead-free packages, making it compliant with environmental regulations.
- AEC-Q101 Qualified: This transistor is qualified to the AEC-Q101 standard, ensuring its reliability and performance in automotive and other demanding applications.
- PPAP Capable: The device is capable of meeting the Production Part Approval Process (PPAP) requirements, which is crucial for automotive and other high-reliability applications.
- Low VCE(sat): The transistor features a low collector-emitter saturation voltage, which is beneficial for reducing power losses in switching applications.
- High DC Current Gain: With a DC current gain (hFE) ranging from 100 to 250, this transistor offers good amplification characteristics.
Applications
- Switching Applications: The BC817-25LT1G is suitable for various switching applications due to its low VCE(sat) and high current gain.
- Steering Logic: It can be used in logic steering circuits where low power consumption and high reliability are required.
- Automotive Control Units: Qualified to AEC-Q101, this transistor is ideal for use in automotive control units and other automotive applications.
- Consumer Electronics: The device is also used in consumer electronics where reliability and performance are critical.
Q & A
- What is the package type of the BC817-25LT1G transistor?
The BC817-25LT1G transistor is housed in the SOT-23 (TO-236) package.
- What are the typical applications of the BC817-25LT1G transistor?
The transistor is used in switching applications, steering logic, automotive control units, and consumer electronics.
- What is the maximum collector-emitter breakdown voltage of the BC817-25LT1G?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
- Is the BC817-25LT1G Pb-Free?
- What is the DC current gain (hFE) of the BC817-25LT1G transistor?
The DC current gain (hFE) ranges from 100 to 250.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC817-25LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V.
- Is the BC817-25LT1G qualified to any automotive standards?
- What is the maximum collector current of the BC817-25LT1G transistor?
The maximum collector current (IC Cont.) is 100 mA.
- What is the power dissipation (PTM) of the BC817-25LT1G transistor?
The power dissipation (PTM) is 0.225 W.
- What is the current-gain bandwidth product (fT) of the BC817-25LT1G transistor?
The current-gain bandwidth product (fT) is 100 MHz.
