Overview
The BC817-40LT3G is an NPN bipolar junction transistor (BJT) manufactured by onsemi. This device is designed for use in both linear and switching applications, making it versatile for a wide range of electronic circuits. The transistor is housed in the SOT-23 package, which is ideal for lower power surface mount applications. It is also available in Pb-free packages, making it suitable for environments where lead-free components are required.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 45 | V |
| Collector-Emitter Breakdown Voltage (VEB = 0, IC = 10 μA) | V(BR)CES | - | - | 50 | V |
| Emitter-Base Breakdown Voltage (IE = 1.0 μA) | V(BR)EBO | - | - | 5.0 | V |
| DC Current Gain (IC = 100 mA, VCE = 1.0 V) | hFE | 250 | - | - | - |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | - | - | 0.7 | V |
| Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) | VBE(on) | - | - | 1.2 | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | - | - | 100 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | - | - | 10 | pF |
| Delay Time (VCC = 3.0 Vdc, VBE = 0.5 V, IC = 10 mA) | td | - | - | 85 | ns |
| Rise Time (VCC = 3.0 Vdc, VBE = 0.5 V, IC = 10 mA) | tr | - | - | - | - |
| Package Type | - | - | - | SOT-23 | - |
| Continuous Collector Current | IC | - | - | 500 | mA |
| Power Dissipation | P_T | - | - | 225 | mW |
Key Features
- General Purpose and Low VCE(sat): The BC817-40LT3G is designed for both linear and switching applications, with a low collector-emitter saturation voltage (VCE(sat)) of 0.7 V.
- Pb-Free Package: Available in lead-free packages, making it suitable for environments requiring Pb-free components.
- AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
- High DC Current Gain: The transistor has a high DC current gain (hFE) of up to 600 at IC = 500 mA and VCE = 1.0 V.
- High Frequency Capability: Features a current-gain bandwidth product (fT) of 100 MHz, making it suitable for high-frequency applications.
Applications
- Steering Logic: Used in steering logic circuits due to its high current gain and low saturation voltage.
- Switching: Suitable for switching applications such as power management and control circuits.
- Automotive Control Units: AEC-Q101 qualified, making it suitable for automotive control units and other automotive applications.
- Consumer Electronics: Used in various consumer electronics for general-purpose amplification and switching).
Q & A
- What is the package type of the BC817-40LT3G transistor?
The BC817-40LT3G transistor is housed in the SOT-23 package.
- What is the maximum collector-emitter breakdown voltage of the BC817-40LT3G?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
- What is the typical collector-emitter saturation voltage of the BC817-40LT3G?
The typical collector-emitter saturation voltage (VCE(sat)) is 0.7 V.
- What is the maximum continuous collector current of the BC817-40LT3G?
The maximum continuous collector current (IC) is 500 mA.
- Is the BC817-40LT3G AEC-Q101 qualified?
Yes, the BC817-40LT3G is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
- What is the power dissipation of the BC817-40LT3G?
The power dissipation (P_T) is 225 mW.
- What is the current-gain bandwidth product (fT) of the BC817-40LT3G?
The current-gain bandwidth product (fT) is 100 MHz.
- Is the BC817-40LT3G available in Pb-free packages?
Yes, the BC817-40LT3G is available in Pb-free packages.
- What are some common applications of the BC817-40LT3G?
Common applications include steering logic, switching, automotive control units, and consumer electronics.
- What is the typical base-emitter on voltage of the BC817-40LT3G?
The typical base-emitter on voltage (VBE(on)) is 1.2 V.
