Overview
The SBC807-25LT1G is a general-purpose PNP silicon transistor manufactured by onsemi. This device is part of the BC807 series, which includes the BC807-16L, BC807-25L, and BC807-40L models. The SBC807-25LT1G is designed for a wide range of applications, including automotive and other sectors that require high reliability and compliance with stringent standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -45 | V |
| Collector-Base Voltage | VCBO | -50 | V |
| Emitter-Base Voltage | VEBO | -6.0 | V |
| Collector Current - Continuous | IC | -500 mA | mAdc |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -100 mA, VCE = -1.0 V) | hFE | 100 - 250 | |
| Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) | VCE(sat) | -0.7 | V |
| Base-Emitter On Voltage (IC = -500 mA, VCE = -1.0 V) | VBE(on) | -1.2 | V |
| Current-Gain Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) | fT | 100 MHz | |
| Output Capacitance (VCB = -10 V, f = 1.0 MHz) | Cobo | 10 pF |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and specific site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with international regulations.
- High DC Current Gain: hFE ranges from 100 to 250, ensuring reliable amplification and switching performance.
- Low Saturation Voltage: VCE(sat) of -0.7 V minimizes power loss in saturation mode.
- Wide Temperature Range: Operational from -55°C to +150°C, making it versatile for various environments.
Applications
The SBC807-25LT1G transistor is suitable for a variety of applications, including:
- Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
- General Purpose Amplification: Can be used in amplifiers, switches, and other general-purpose electronic circuits.
- Industrial Control Systems: Reliable performance in industrial environments.
- Consumer Electronics: Suitable for use in various consumer electronic devices requiring robust and reliable transistor performance.
Q & A
- What is the collector-emitter voltage rating of the SBC807-25LT1G transistor?
The collector-emitter voltage (VCEO) is rated at -45 V. - What is the maximum continuous collector current for the SBC807-25LT1G?
The maximum continuous collector current (IC) is -500 mA. - Is the SBC807-25LT1G RoHS compliant?
Yes, the SBC807-25LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. - What is the DC current gain (hFE) of the SBC807-25LT1G transistor?
The DC current gain (hFE) ranges from 100 to 250. - What is the collector-emitter saturation voltage (VCE(sat)) of the SBC807-25LT1G?
The collector-emitter saturation voltage (VCE(sat)) is -0.7 V. - What is the base-emitter on voltage (VBE(on)) of the SBC807-25LT1G?
The base-emitter on voltage (VBE(on)) is -1.2 V. - What is the current-gain bandwidth product (fT) of the SBC807-25LT1G?
The current-gain bandwidth product (fT) is 100 MHz. - What is the output capacitance (Cobo) of the SBC807-25LT1G?
The output capacitance (Cobo) is 10 pF. - What are the typical operating temperatures for the SBC807-25LT1G?
The junction and storage temperature range is from -55°C to +150°C. - Is the SBC807-25LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
