BC807-16LT3G
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onsemi BC807-16LT3G

Manufacturer No:
BC807-16LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-16LT3G is a general-purpose PNP silicon transistor manufactured by onsemi. This transistor is part of the BC807 series, which includes various models with different current handling capabilities. The BC807-16LT3G is specifically designed for applications requiring a continuous collector current of up to 500 mA. It is housed in a SOT-23 package, making it suitable for a wide range of electronic circuits where space is a consideration.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO-45V
Collector-Base VoltageVCBO-50V
Emitter-Base VoltageVEBO-6.0V
Collector Current - ContinuousIC-500mA
DC Current Gain (IC = -100 mA, VCE = -1.0 V)hFE100 - 250
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA)VCE(sat)-0.7V
Base-Emitter On Voltage (IC = -500 mA, VCE = -1.0 V)VBE(on)-1.2V
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz)fT100MHz
Output Capacitance (VCB = -10 V, f = 1.0 MHz)Cobo10pF
Thermal Resistance, Junction-to-AmbientRJA556°C/W

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental sustainability and compliance with regulatory standards.
  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • High DC current gain (hFE) ranging from 100 to 250, depending on the collector current.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V, which is beneficial for reducing power losses in switching applications.
  • High current-gain bandwidth product (fT) of 100 MHz, suitable for high-frequency applications.

Applications

The BC807-16LT3G transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification circuits.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Consumer electronics such as audio amplifiers and power supplies.
  • Industrial control systems and automation.
  • Communication equipment and other high-frequency applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BC807-16LT3G transistor?
    The maximum collector-emitter voltage (VCEO) is -45 V.
  2. What is the continuous collector current rating of the BC807-16LT3G?
    The continuous collector current (IC) is rated at -500 mA.
  3. Is the BC807-16LT3G RoHS compliant?
    Yes, the BC807-16LT3G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  4. What is the typical DC current gain (hFE) of the BC807-16LT3G?
    The typical DC current gain (hFE) ranges from 100 to 250, depending on the collector current.
  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-16LT3G?
    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.
  6. What is the current-gain bandwidth product (fT) of the BC807-16LT3G?
    The current-gain bandwidth product (fT) is 100 MHz.
  7. In what package is the BC807-16LT3G available?
    The BC807-16LT3G is available in a SOT-23 package.
  8. Is the BC807-16LT3G suitable for automotive applications?
    Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  9. What is the thermal resistance, junction-to-ambient (RJA) of the BC807-16LT3G?
    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.
  10. What is the output capacitance (Cobo) of the BC807-16LT3G?
    The output capacitance (Cobo) is 10 pF.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC807-16LT3G BC807-16LT1G BC807-16LT3
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 300 mW 300 mW 300 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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