SBC807-40LT1G
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onsemi SBC807-40LT1G

Manufacturer No:
SBC807-40LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBC807-40LT1G is a general-purpose PNP silicon transistor manufactured by onsemi. This transistor is part of the BC807 series, which includes the BC807-16L, BC807-25L, and BC807-40L models. The SBC807-40LT1G is designed for a wide range of applications, including automotive and other sectors that require high reliability and compliance with stringent quality standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. The device is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEBO -6.0 V
Collector Current - Continuous IC -500 mA mAdc
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE 100 - 250
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -0.7 V
Base-Emitter On Voltage (IC = -500 mA, VCE = -1.0 V) VBE(on) -1.2 V
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) fT 100 MHz MHz
Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cobo 10 pF pF

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
  • High DC current gain (hFE) with a range of 100 to 250 at IC = -100 mA and VCE = -1.0 V.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V at IC = -500 mA and IB = -50 mA.
  • Low base-emitter on voltage (VBE(on)) of -1.2 V at IC = -500 mA and VCE = -1.0 V.
  • High current-gain bandwidth product (fT) of 100 MHz at IC = -10 mA, VCE = -5.0 Vdc, and f = 100 MHz.
  • Compact SOT-23 package, suitable for space-constrained designs.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial control systems: Used in industrial control circuits where high reliability and robust performance are required.
  • Consumer electronics: Can be used in a variety of consumer electronic devices that require general-purpose transistor functionality.
  • Power management: Useful in power management circuits due to its high current handling and low saturation voltage.
  • Audio and signal processing: Can be employed in audio and signal processing circuits where low noise and high gain are necessary.

Q & A

  1. What is the maximum collector-emitter voltage for the SBC807-40LT1G transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the continuous collector current rating for this transistor?

    The continuous collector current (IC) is rated at -500 mA.

  3. Is the SBC807-40LT1G transistor RoHS compliant?

    Yes, the transistor is Pb-free, halogen-free, and RoHS compliant.

  4. What is the typical DC current gain (hFE) for the SBC807-40LT1G?

    The typical DC current gain (hFE) ranges from 100 to 250 at IC = -100 mA and VCE = -1.0 V.

  5. What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V at IC = -500 mA and IB = -50 mA.

  6. What is the base-emitter on voltage (VBE(on)) for the SBC807-40LT1G?

    The base-emitter on voltage (VBE(on)) is -1.2 V at IC = -500 mA and VCE = -1.0 V.

  7. What is the current-gain bandwidth product (fT) for this transistor?

    The current-gain bandwidth product (fT) is 100 MHz at IC = -10 mA, VCE = -5.0 Vdc, and f = 100 MHz.

  8. In what package is the SBC807-40LT1G transistor available?

    The transistor is available in the SOT-23 package.

  9. Is the SBC807-40LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

  10. What are the junction and storage temperature limits for the SBC807-40LT1G?

    The junction and storage temperature limits are -55°C to +150°C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number SBC807-40LT1G SBC817-40LT1G SBC807-40LT3G SBC807-40WT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 300 mW 300 mW 300 mW 460 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323)

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