Overview
The BC807-25LT1G is a general-purpose PNP silicon transistor manufactured by onsemi. This transistor is designed for a wide range of applications requiring a reliable and efficient switching or amplification solution. It is packaged in the SOT23 format, making it suitable for surface-mount technology (SMT) assembly. The BC807-25LT1G is known for its robust performance characteristics, including high current gain and low saturation voltage, making it an excellent choice for various electronic circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP Silicon |
| Collector-Base Voltage (Vcbo) | 45 V |
| Collector-Emitter Voltage (Vceo) | 45 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 0.5 A |
| Base Current (Ib) | -50 mA (for Vce(sat)) |
| Power Dissipation (Pd) | 0.225 W |
| Junction Temperature (Tj) | -55 to +150 °C |
| Collector-Emitter Saturation Voltage (Vce(sat)) | -0.7 V (at Ic = -500 mA, Ib = -50 mA) |
| Base-Emitter On Voltage (Vbe(on)) | -1.2 V (at Ic = -500 mA, Vce = -1.0 V) |
| Current Gain (hfe) | 100 to 400 (at Ic = -500 mA, Vce = -1.0 V) |
| Package | SOT23 |
Key Features
- High current gain (hfe) ranging from 100 to 400, ensuring reliable amplification and switching performance.
- Low collector-emitter saturation voltage (Vce(sat)) of -0.7 V, which minimizes power loss in saturation mode.
- Compact SOT23 package suitable for surface-mount technology, making it ideal for space-constrained designs.
- Wide operating temperature range from -55 to +150 °C, enhancing reliability in various environmental conditions.
- Low base-emitter on voltage (Vbe(on)) of -1.2 V, which helps in reducing the base current required for operation.
Applications
The BC807-25LT1G transistor is versatile and can be used in a variety of applications, including:
- General-purpose switching and amplification circuits.
- Audio amplifiers and audio equipment.
- Automotive electronics.
- Consumer electronics such as TVs, radios, and other household appliances.
- Industrial control systems and automation.
Q & A
- What is the transistor type of the BC807-25LT1G?
The BC807-25LT1G is a PNP silicon transistor. - What is the maximum collector current of the BC807-25LT1G?
The maximum collector current is 0.5 A. - What is the collector-emitter saturation voltage (Vce(sat)) of the BC807-25LT1G?
The collector-emitter saturation voltage is -0.7 V at Ic = -500 mA and Ib = -50 mA. - What is the base-emitter on voltage (Vbe(on)) of the BC807-25LT1G?
The base-emitter on voltage is -1.2 V at Ic = -500 mA and Vce = -1.0 V. - What is the power dissipation (Pd) of the BC807-25LT1G?
The power dissipation is 0.225 W. - What is the junction temperature range of the BC807-25LT1G?
The junction temperature range is -55 to +150 °C. - What package type is the BC807-25LT1G available in?
The BC807-25LT1G is available in the SOT23 package. - What are some common applications of the BC807-25LT1G?
Common applications include general-purpose switching and amplification circuits, audio amplifiers, automotive electronics, consumer electronics, and industrial control systems. - What is the current gain (hfe) range of the BC807-25LT1G?
The current gain (hfe) ranges from 100 to 400 at Ic = -500 mA and Vce = -1.0 V. - Where can I find detailed specifications for the BC807-25LT1G?
Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Digi-Key, Mouser, and TME.
