BC807-25WT1G
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onsemi BC807-25WT1G

Manufacturer No:
BC807-25WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25WT1G is a PNP general-purpose transistor manufactured by onsemi. This transistor is part of the BC807 series, known for its high current and voltage handling capabilities. It is packaged in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The BC807-25WT1G is AEC-Q101 qualified and PPAP capable, ensuring its reliability and compliance with automotive and other stringent application requirements. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -500 mA
DC Current Gain (hFE) hFE 160 - 400 -
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V
Base-Emitter On Voltage VBE(on) -1.2 V
Current-Gain Bandwidth Product fT 100 MHz
Maximum Junction Temperature TJ 150 °C
Package Type - SOT323 (SC-70) -

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
  • High current handling capability of up to 500 mA.
  • High voltage handling with a collector-emitter voltage of up to 45 V.
  • Small SOT323 (SC-70) package, ideal for space-constrained designs.
  • DC current gain (hFE) range of 160 to 400, providing flexibility in design.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V, reducing power losses.

Applications

The BC807-25WT1G transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control systems: Its high current and voltage handling capabilities make it ideal for industrial control and automation.
  • Consumer electronics: It can be used in various consumer electronic devices where space is limited and reliability is crucial.
  • Power management: Its low VCE(sat) and high current gain make it suitable for power management circuits).

Q & A

  1. What is the maximum collector-emitter voltage of the BC807-25WT1G transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V).

  2. What is the continuous collector current rating of the BC807-25WT1G?

    The continuous collector current (IC) is rated at -500 mA).

  3. Is the BC807-25WT1G transistor RoHS compliant?
  4. What is the package type of the BC807-25WT1G transistor?

    The transistor is packaged in a SOT323 (SC-70) surface-mounted device (SMD) plastic package).

  5. What is the DC current gain (hFE) range of the BC807-25WT1G transistor?

    The DC current gain (hFE) ranges from 160 to 400).

  6. What is the maximum junction temperature of the BC807-25WT1G transistor?

    The maximum junction temperature (TJ) is 150°C).

  7. Is the BC807-25WT1G transistor suitable for automotive applications?
  8. What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-25WT1G transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V).

  9. What is the current-gain bandwidth product (fT) of the BC807-25WT1G transistor?

    The current-gain bandwidth product (fT) is 100 MHz).

  10. Where can I purchase the BC807-25WT1G transistor?

    The BC807-25WT1G transistor can be purchased from various distributors such as Newark, Digi-Key, and TME).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Same Series
SBC807-25WT1G
SBC807-25WT1G
TRANS PNP 45V 0.5A SOT23-3
BC807-40WT1G
BC807-40WT1G
TRANS PNP 45V 0.5A SC70-3
BC807-25WT1G
BC807-25WT1G
TRANS PNP 45V 0.5A SC70-3

Similar Products

Part Number BC807-25WT1G BC807-25LT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 460 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-70-3 (SOT323) SOT-23-3 (TO-236)

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