BC807-40WT1G
  • Share:

onsemi BC807-40WT1G

Manufacturer No:
BC807-40WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40WT1G is a general-purpose PNP bipolar transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. The BC807-40WT1G is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and suitable for modern electronic designs.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO-45V
Collector-Base VoltageVCBO-50V
Emitter-Base VoltageVEBO-5.0V
Collector Current - ContinuousIC-500mA
Collector-Emitter Saturation VoltageVCE(sat)-0.7V
Base-Emitter On VoltageVBE(on)-1.2V
DC Current GainhFE160 - 600
Current-Gain Bandwidth ProductfT100MHz
Junction and Storage TemperatureTJ, Tstg-55 to +150°C
Package TypeSC-70-3 / SOT-323-3

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V, which is beneficial for reducing power losses.
  • High DC current gain (hFE) ranging from 160 to 600, providing good amplification characteristics.
  • Current-gain bandwidth product (fT) of 100 MHz, suitable for high-frequency applications.

Applications

The BC807-40WT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General-purpose amplification: Its high DC current gain and low VCE(sat) make it ideal for amplifier circuits.
  • Switching circuits: The transistor's ability to handle high frequencies and low saturation voltage makes it suitable for switching applications.
  • Consumer electronics: It can be used in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC807-40WT1G?
    The collector-emitter voltage (VCEO) of the BC807-40WT1G is -45 V.
  2. Is the BC807-40WT1G RoHS compliant?
    Yes, the BC807-40WT1G is Pb-free, halogen-free, and RoHS compliant.
  3. What is the DC current gain (hFE) range of the BC807-40WT1G?
    The DC current gain (hFE) of the BC807-40WT1G ranges from 160 to 600.
  4. What is the typical current-gain bandwidth product (fT) of the BC807-40WT1G?
    The current-gain bandwidth product (fT) of the BC807-40WT1G is 100 MHz.
  5. What is the junction and storage temperature range for the BC807-40WT1G?
    The junction and storage temperature range for the BC807-40WT1G is -55 to +150°C.
  6. What package type is the BC807-40WT1G available in?
    The BC807-40WT1G is available in the SC-70-3 / SOT-323-3 package type.
  7. Is the BC807-40WT1G suitable for automotive applications?
    Yes, the BC807-40WT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  8. What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-40WT1G?
    The collector-emitter saturation voltage (VCE(sat)) of the BC807-40WT1G is -0.7 V.
  9. What is the base-emitter on voltage (VBE(on)) of the BC807-40WT1G?
    The base-emitter on voltage (VBE(on)) of the BC807-40WT1G is -1.2 V.
  10. Can the BC807-40WT1G be used in high-frequency applications?
    Yes, the BC807-40WT1G can be used in high-frequency applications due to its current-gain bandwidth product (fT) of 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
0 Remaining View Similar

In Stock

$0.21
4,411

Please send RFQ , we will respond immediately.

Same Series
SBC807-25WT1G
SBC807-25WT1G
TRANS PNP 45V 0.5A SOT23-3
BC807-40WT1G
BC807-40WT1G
TRANS PNP 45V 0.5A SC70-3
BC807-25WT1G
BC807-25WT1G
TRANS PNP 45V 0.5A SC70-3

Similar Products

Part Number BC807-40WT1G BC807-40LT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 460 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-70-3 (SOT323) SOT-23-3 (TO-236)

Related Product By Categories

MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC859C_R1_00001
BC859C_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT23
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC