Overview
The BC807-40WT1G is a general-purpose PNP bipolar transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. The BC807-40WT1G is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and suitable for modern electronic designs.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | -45 | V |
Collector-Base Voltage | VCBO | -50 | V |
Emitter-Base Voltage | VEBO | -5.0 | V |
Collector Current - Continuous | IC | -500 | mA |
Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | V |
Base-Emitter On Voltage | VBE(on) | -1.2 | V |
DC Current Gain | hFE | 160 - 600 | |
Current-Gain Bandwidth Product | fT | 100 | MHz |
Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Package Type | SC-70-3 / SOT-323-3 |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V, which is beneficial for reducing power losses.
- High DC current gain (hFE) ranging from 160 to 600, providing good amplification characteristics.
- Current-gain bandwidth product (fT) of 100 MHz, suitable for high-frequency applications.
Applications
The BC807-40WT1G is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- General-purpose amplification: Its high DC current gain and low VCE(sat) make it ideal for amplifier circuits.
- Switching circuits: The transistor's ability to handle high frequencies and low saturation voltage makes it suitable for switching applications.
- Consumer electronics: It can be used in various consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC807-40WT1G?
The collector-emitter voltage (VCEO) of the BC807-40WT1G is -45 V. - Is the BC807-40WT1G RoHS compliant?
Yes, the BC807-40WT1G is Pb-free, halogen-free, and RoHS compliant. - What is the DC current gain (hFE) range of the BC807-40WT1G?
The DC current gain (hFE) of the BC807-40WT1G ranges from 160 to 600. - What is the typical current-gain bandwidth product (fT) of the BC807-40WT1G?
The current-gain bandwidth product (fT) of the BC807-40WT1G is 100 MHz. - What is the junction and storage temperature range for the BC807-40WT1G?
The junction and storage temperature range for the BC807-40WT1G is -55 to +150°C. - What package type is the BC807-40WT1G available in?
The BC807-40WT1G is available in the SC-70-3 / SOT-323-3 package type. - Is the BC807-40WT1G suitable for automotive applications?
Yes, the BC807-40WT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. - What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-40WT1G?
The collector-emitter saturation voltage (VCE(sat)) of the BC807-40WT1G is -0.7 V. - What is the base-emitter on voltage (VBE(on)) of the BC807-40WT1G?
The base-emitter on voltage (VBE(on)) of the BC807-40WT1G is -1.2 V. - Can the BC807-40WT1G be used in high-frequency applications?
Yes, the BC807-40WT1G can be used in high-frequency applications due to its current-gain bandwidth product (fT) of 100 MHz.