BC807-40WT1G
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onsemi BC807-40WT1G

Manufacturer No:
BC807-40WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40WT1G is a general-purpose PNP bipolar transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. The BC807-40WT1G is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and suitable for modern electronic designs.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO-45V
Collector-Base VoltageVCBO-50V
Emitter-Base VoltageVEBO-5.0V
Collector Current - ContinuousIC-500mA
Collector-Emitter Saturation VoltageVCE(sat)-0.7V
Base-Emitter On VoltageVBE(on)-1.2V
DC Current GainhFE160 - 600
Current-Gain Bandwidth ProductfT100MHz
Junction and Storage TemperatureTJ, Tstg-55 to +150°C
Package TypeSC-70-3 / SOT-323-3

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V, which is beneficial for reducing power losses.
  • High DC current gain (hFE) ranging from 160 to 600, providing good amplification characteristics.
  • Current-gain bandwidth product (fT) of 100 MHz, suitable for high-frequency applications.

Applications

The BC807-40WT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • General-purpose amplification: Its high DC current gain and low VCE(sat) make it ideal for amplifier circuits.
  • Switching circuits: The transistor's ability to handle high frequencies and low saturation voltage makes it suitable for switching applications.
  • Consumer electronics: It can be used in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC807-40WT1G?
    The collector-emitter voltage (VCEO) of the BC807-40WT1G is -45 V.
  2. Is the BC807-40WT1G RoHS compliant?
    Yes, the BC807-40WT1G is Pb-free, halogen-free, and RoHS compliant.
  3. What is the DC current gain (hFE) range of the BC807-40WT1G?
    The DC current gain (hFE) of the BC807-40WT1G ranges from 160 to 600.
  4. What is the typical current-gain bandwidth product (fT) of the BC807-40WT1G?
    The current-gain bandwidth product (fT) of the BC807-40WT1G is 100 MHz.
  5. What is the junction and storage temperature range for the BC807-40WT1G?
    The junction and storage temperature range for the BC807-40WT1G is -55 to +150°C.
  6. What package type is the BC807-40WT1G available in?
    The BC807-40WT1G is available in the SC-70-3 / SOT-323-3 package type.
  7. Is the BC807-40WT1G suitable for automotive applications?
    Yes, the BC807-40WT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  8. What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-40WT1G?
    The collector-emitter saturation voltage (VCE(sat)) of the BC807-40WT1G is -0.7 V.
  9. What is the base-emitter on voltage (VBE(on)) of the BC807-40WT1G?
    The base-emitter on voltage (VBE(on)) of the BC807-40WT1G is -1.2 V.
  10. Can the BC807-40WT1G be used in high-frequency applications?
    Yes, the BC807-40WT1G can be used in high-frequency applications due to its current-gain bandwidth product (fT) of 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Same Series
SBC807-25WT1G
SBC807-25WT1G
TRANS PNP 45V 0.5A SOT23-3
BC807-40WT1G
BC807-40WT1G
TRANS PNP 45V 0.5A SC70-3
BC807-25WT1G
BC807-25WT1G
TRANS PNP 45V 0.5A SC70-3

Similar Products

Part Number BC807-40WT1G BC807-40LT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 460 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-70-3 (SOT323) SOT-23-3 (TO-236)

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