SBC807-40WT1G
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onsemi SBC807-40WT1G

Manufacturer No:
SBC807-40WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBC807-40WT1G is a general-purpose PNP bipolar transistor manufactured by onsemi. This transistor is part of the BC807-40W series, which is known for its reliability and suitability for various applications, including automotive and other sectors requiring unique site and control change requirements. The SBC807-40WT1G is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards.

This transistor is designed to be Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulations. The SC-70 package (SOT-323) is compact and suitable for surface-mount applications, enhancing board space efficiency.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - -45 V
Collector-Base Voltage VCBO - - -50 V
Emitter-Base Voltage VEBO - - -5.0 V
Collector Current - Continuous IC - - -500 mA
Total Device Dissipation (FR-5 Board, TA = 25°C) PD - - 460 mW
Thermal Resistance, Junction-to-Ambient RJA - - 272 °C/W
Junction and Storage Temperature TJ, Tstg -55 - 150 °C
DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE 160 250 400 -
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0.7 V
Base-Emitter On Voltage (IC = -500 mA, VCE = -1.0 V) VBE(on) - - -1.2 V

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
  • Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly and compliant with current regulations.
  • Compact SC-70 Package (SOT-323): Ideal for surface-mount applications, enhancing board space efficiency.
  • High DC Current Gain: hFE ranges from 160 to 400, ensuring reliable performance in various circuits.
  • Low Collector-Emitter Saturation Voltage: VCE(sat) of -0.7 V, which is beneficial for reducing power losses in switching applications.
  • Wide Operating Temperature Range: Junction and storage temperature range from -55°C to 150°C, making it versatile for different environmental conditions.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General Purpose Amplification: Can be used in general-purpose amplifier circuits where reliability and low noise are essential.
  • Switching Circuits: Ideal for switching applications due to its low VCE(sat) and high current gain.
  • Consumer Electronics: Used in consumer electronics where compact packaging and low power consumption are required.
  • Industrial Control Systems: Suitable for industrial control systems that require robust and reliable components.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the SBC807-40WT1G transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. Is the SBC807-40WT1G transistor RoHS compliant?

    Yes, the SBC807-40WT1G transistor is Pb-free, halogen-free, and RoHS compliant.

  3. What is the typical DC current gain (hFE) of the SBC807-40WT1G transistor?

    The typical DC current gain (hFE) ranges from 160 to 400.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the SBC807-40WT1G transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.

  5. What is the junction and storage temperature range of the SBC807-40WT1G transistor?

    The junction and storage temperature range is from -55°C to 150°C.

  6. Is the SBC807-40WT1G transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.

  7. What package type does the SBC807-40WT1G transistor use?

    The transistor uses the SC-70 package (SOT-323).

  8. What is the maximum collector current (IC) of the SBC807-40WT1G transistor?

    The maximum collector current (IC) is -500 mA.

  9. What is the thermal resistance, junction-to-ambient (RJA) of the SBC807-40WT1G transistor?

    The thermal resistance, junction-to-ambient (RJA), is 272 °C/W.

  10. Can the SBC807-40WT1G transistor be used in switching circuits?

    Yes, it is ideal for switching applications due to its low VCE(sat) and high current gain.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Same Series
SBC807-25WT1G
SBC807-25WT1G
TRANS PNP 45V 0.5A SOT23-3
BC807-40WT1G
BC807-40WT1G
TRANS PNP 45V 0.5A SC70-3
BC807-25WT1G
BC807-25WT1G
TRANS PNP 45V 0.5A SC70-3

Similar Products

Part Number SBC807-40WT1G SBC807-40LT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 460 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-70-3 (SOT323) SOT-23-3 (TO-236)

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