BC807-16LT1G
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onsemi BC807-16LT1G

Manufacturer No:
BC807-16LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-16LT1G is a general-purpose PNP silicon transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including amplification and switching. It is part of the BC807 series, which includes various models with different current handling capabilities. The BC807-16LT1G is known for its reliability, robust performance, and compliance with environmental standards such as RoHS, Pb-free, and halogen-free/BFR-free.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -500 mA mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW mW
Thermal Resistance, Junction-to-Ambient RJA 556 °C/W °C/W
DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE 100 - 250
Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) -0.7 V V
Base-Emitter On Voltage (IC = -500 mA, IB = -1.0 V) VBE(on) -1.2 V V
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) fT 100 MHz MHz

Key Features

  • Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
  • General-purpose PNP silicon transistor suitable for amplification and switching applications.
  • High collector current handling capability of up to -500 mA.
  • Low collector-emitter saturation voltage of -0.7 V, enhancing efficiency in switching applications.
  • Wide operating temperature range from -55°C to 150°C, making it versatile for various environments.
  • Compact SOT-23 package, ideal for space-constrained designs.

Applications

  • Amplification circuits: Suitable for use in audio amplifiers, signal amplifiers, and other general-purpose amplification needs.
  • Switching circuits: Ideal for use in power switching, logic circuits, and other switching applications due to its low saturation voltage.
  • Automotive electronics: Can be used in various automotive systems due to its robust performance and wide temperature range.
  • Consumer electronics: Applicable in a wide range of consumer electronic devices requiring reliable transistor performance.
  • Industrial control systems: Suitable for use in industrial control circuits, sensors, and other industrial applications.

Q & A

  1. What is the collector-emitter voltage rating of the BC807-16LT1G transistor?

    The collector-emitter voltage rating is -45 V.

  2. What is the maximum collector current of the BC807-16LT1G transistor?

    The maximum collector current is -500 mA.

  3. Is the BC807-16LT1G transistor RoHS compliant?
  4. What is the typical DC current gain of the BC807-16LT1G transistor?

    The typical DC current gain (hFE) is between 100 and 250 at IC = -100 mA and VCE = -1.0 V.

  5. What is the collector-emitter saturation voltage of the BC807-16LT1G transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V at IC = -500 mA and IB = -50 mA.

  6. What is the thermal resistance, junction-to-ambient, of the BC807-16LT1G transistor?

    The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.

  7. In what package is the BC807-16LT1G transistor available?

    The BC807-16LT1G transistor is available in the SOT-23 package.

  8. What is the operating temperature range of the BC807-16LT1G transistor?

    The operating temperature range is from -55°C to 150°C.

  9. What are some common applications of the BC807-16LT1G transistor?

    Common applications include amplification circuits, switching circuits, automotive electronics, consumer electronics, and industrial control systems.

  10. What is the current-gain bandwidth product of the BC807-16LT1G transistor?

    The current-gain bandwidth product (fT) is 100 MHz at IC = -10 mA, VCE = -5.0 Vdc, and f = 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
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Similar Products

Part Number BC807-16LT1G BC807-16LT3G BC807-16LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP PNP -
Current - Collector (Ic) (Max) 500 mA 500 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V -
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V -
Power - Max 300 mW 300 mW -
Frequency - Transition 100MHz 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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