NSS1C201MZ4T1G
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onsemi NSS1C201MZ4T1G

Manufacturer No:
NSS1C201MZ4T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 2A SOT223
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NSS1C201MZ4T1G is a low VCE(sat) NPN transistor from onsemi's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications where efficient energy control is crucial. It features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it suitable for a variety of applications requiring precise and efficient power management.

Key Specifications

Characteristic Symbol Max Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 140 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current - Continuous IC 2.0 A
Collector Current - Peak ICM 3.0 A
Total Device Dissipation (TA = 25°C) PD 800 mW (Note 1), 2.0 W (Note 2) mW, W
Thermal Resistance, Junction-to-Ambient RJA 155 °C/W (Note 1), 64 °C/W (Note 2) °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Collector-Emitter Saturation Voltage (IC = 2.0 A, IB = 0.200 A) VCE(sat) 0.180 V
Base-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.100 A) VBE(sat) 1.10 V
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT 100 MHz

Note: The notes refer to different thermal conditions and copper trace sizes as specified in the datasheet.

Key Features

  • Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
  • High current gain capability.
  • Pb-free, halogen-free, and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Miniature surface mount SOT-223 package.
  • High cutoff frequency (fT) of 100 MHz.
  • Low base-emitter saturation voltage (VBE(sat)).

Applications

  • DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
  • Low voltage motor controls in mass storage products like disc drives and tape drives.
  • Automotive applications including air bag deployment and instrument clusters.
  • Analog amplifiers due to high linear gain (Beta).

Q & A

  1. What is the maximum collector-emitter voltage of the NSS1C201MZ4T1G?

    The maximum collector-emitter voltage (VCEO) is 100 Vdc.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) is 2.0 A.

  3. Is the NSS1C201MZ4T1G RoHS compliant?
  4. What are the typical applications of the NSS1C201MZ4T1G?

    Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.

  5. What is the cutoff frequency of the NSS1C201MZ4T1G?

    The cutoff frequency (fT) is 100 MHz.

  6. Is the NSS1C201MZ4T1G suitable for automotive applications?
  7. What is the package type of the NSS1C201MZ4T1G?

    The package type is SOT-223.

  8. What is the maximum junction temperature of the NSS1C201MZ4T1G?

    The maximum junction temperature is +150°C.

  9. What is the base-emitter saturation voltage of the NSS1C201MZ4T1G?

    The base-emitter saturation voltage (VBE(sat)) is 1.10 V.

  10. Can the NSS1C201MZ4T1G be driven directly from PMU’s control outputs?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:180mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
Power - Max:800 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Same Series
NSS1C201MZ4T3G
NSS1C201MZ4T3G
TRANS NPN 100V 2A SOT223
NSS1C201MZ4T1G
NSS1C201MZ4T1G
TRANS NPN 100V 2A SOT223

Similar Products

Part Number NSS1C201MZ4T1G NSS1C201MZ4T3G NSV1C201MZ4T1G NSS1C200MZ4T1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A 180mV @ 200mA, 2A 180mV @ 200mA, 2A 220mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V 120 @ 500mA, 2V 120 @ 500mA, 2V 120 @ 500mA, 2V
Power - Max 800 mW 800 mW 800 mW 800 mW
Frequency - Transition 100MHz 100MHz 100MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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