Overview
The NSS1C200MZ4T1G is a PNP transistor from onsemi's e2PowerEdge family, designed for low voltage, high speed switching applications. This miniature surface mount device features ultra-low saturation voltage (VCE(sat)) and high current gain capability, making it ideal for efficient energy control in various electronic systems.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -100 | Vdc | ||
| Collector-Base Voltage | VCBO | -140 | Vdc | ||
| Emitter-Base Voltage | VEBO | -7.0 | Vdc | ||
| Base Current - Continuous | IB | 1.0 | A | ||
| Collector Current - Continuous | IC | 2.0 | A | ||
| Collector Current - Peak | ICM | 3.0 | A | ||
| Total Device Dissipation (TA = 25°C) | PD | 800 | mW | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 155 | °C/W | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | |
| DC Current Gain (IC = -2.0 A, VCE = -2.0 V) | hFE | 50 | |||
| Collector-Emitter Saturation Voltage (IC = -2.0 A, IB = -0.200 A) | VCE(sat) | -0.220 | V |
Key Features
- Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
- High current gain capability.
- Pb-free, halogen-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Linear gain (Beta) makes them ideal for analog amplifiers.
- High current gain allows devices to be driven directly from PMU’s control outputs.
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products such as disc drives and tape drives.
- Automotive applications including air bag deployment and instrument clusters.
Q & A
- What is the maximum collector-emitter voltage of the NSS1C200MZ4T1G transistor?
The maximum collector-emitter voltage (VCEO) is -100 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 2.0 A.
- Is the NSS1C200MZ4T1G transistor RoHS compliant?
- What are the typical applications of the NSS1C200MZ4T1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
- What is the thermal resistance, junction-to-ambient, for the NSS1C200MZ4T1G?
The thermal resistance, junction-to-ambient (RθJA), is 155 °C/W.
- Is the NSS1C200MZ4T1G suitable for high-speed switching applications?
- What is the collector-emitter saturation voltage at a collector current of 2.0 A?
The collector-emitter saturation voltage (VCE(sat)) at IC = -2.0 A and IB = -0.200 A is -0.220 V.
- Can the NSS1C200MZ4T1G be used in automotive applications?
- What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is -55°C to 150°C.
- What is the DC current gain of the NSS1C200MZ4T1G at a collector current of 2.0 A?
The DC current gain (hFE) at IC = -2.0 A and VCE = -2.0 V is 50.
