Overview
The NTJD5121NT1G is a dual N-channel power MOSFET produced by ON Semiconductor. This component is designed for various applications requiring low power dissipation and high efficiency. It operates in enhancement mode and features a maximum drain-source voltage of 60 V and a continuous drain current of 295 mA. The MOSFET is packaged in a 6-pin SOT-363 (SC-88) surface mount package, making it suitable for compact and high-density circuit designs. The device is also ESD protected, ensuring reliability in harsh environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | N | - |
| Maximum Drain-Source Voltage (VDSS) | 60 | V |
| Maximum Continuous Drain Current (ID) | 295 mA | mA |
| Maximum Gate-Source Voltage (VGS) | ±20 | V |
| Maximum Gate Threshold Voltage (VGS(TH)) | 1.0 - 2.5 | V |
| Maximum Drain-Source On Resistance (RDS(on)) | 1.6 Ω @ 10 V, 500 mA | Ω |
| Maximum Power Dissipation | 266 mW | mW |
| Minimum Operating Temperature | -55 °C | °C |
| Maximum Operating Temperature | 150 °C | °C |
| Package Type | SOT-363 (SC-88) | - |
| Mounting Type | Surface Mount | - |
| Pin Count | 6 | - |
Key Features
- Low RDS(on): The MOSFET has a low drain-source on resistance, which minimizes power losses and enhances efficiency.
- Low Gate Threshold Voltage: With a gate threshold voltage range of 1.0 to 2.5 V, it is easy to control the MOSFET with low gate drive voltages.
- Low Input Capacitance: This feature helps in reducing the gate drive requirements and improving switching speeds.
- ESD Protected Gate: The MOSFET is designed with ESD protection to ensure reliability in environments prone to electrostatic discharge.
- Dual N-Channel Configuration: The device includes two N-channel MOSFETs in a single package, making it suitable for applications requiring dual switching or load management.
- Pb-Free and RoHS Compliant: The component is lead-free and compliant with RoHS regulations, making it environmentally friendly.
Applications
- Low Side Load Switch: The NTJD5121NT1G can be used as a low side switch in various power management circuits.
- DC-DC Converters: It is suitable for use in buck and boost DC-DC converter circuits due to its low RDS(on) and high efficiency.
- General Power Switching: The MOSFET can be used in any application requiring high efficiency and low power dissipation switching.
Q & A
- What is the maximum drain-source voltage of the NTJD5121NT1G MOSFET?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating of the NTJD5121NT1G?
The continuous drain current (ID) is 295 mA.
- What is the package type of the NTJD5121NT1G?
The package type is SOT-363 (SC-88).
- Is the NTJD5121NT1G ESD protected?
- What are the operating temperature ranges for the NTJD5121NT1G?
The minimum operating temperature is -55 °C, and the maximum operating temperature is 150 °C.
- What is the typical gate charge at VGS = 4.5 V?
The typical gate charge is 0.9 nC at VGS = 4.5 V.
- Is the NTJD5121NT1G Pb-free and RoHS compliant?
- What are some common applications for the NTJD5121NT1G?
- How many elements are included in the NTJD5121NT1G package?
- What is the maximum power dissipation of the NTJD5121NT1G?
