NTMD5838NLR2G
  • Share:

onsemi NTMD5838NLR2G

Manufacturer No:
NTMD5838NLR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 7.4A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMD5838NLR2G is a dual N-channel MOSFET array produced by onsemi, designed for high-performance applications. This component is packaged in an 8-SOIC (Small Outline Integrated Circuit) surface mount package, making it suitable for a variety of electronic systems where space efficiency and reliability are crucial. The MOSFET array is known for its robust electrical characteristics and thermal performance, making it an excellent choice for power management and switching applications.

Key Specifications

ParameterValue
Channel ModeEnhancement, Dual N-Channel
Maximum Operating Voltage40 V
Maximum Continuous Drain Current7.4 A (per channel)
Maximum Power Dissipation3 W
Maximum Operating Temperature+150°C
Packaging8-SOIC, Pb-Free, Tape & Reel

Key Features

  • Dual N-channel MOSFET array for enhanced performance and reliability.
  • High maximum operating voltage of 40 V and continuous drain current of 7.4 A per channel.
  • Compact 8-SOIC surface mount package for space-efficient designs.
  • High maximum operating temperature of +150°C, suitable for demanding environments.
  • Pb-Free packaging, compliant with environmental regulations.

Applications

The NTMD5838NLR2G MOSFET array is versatile and can be used in a variety of applications, including:

  • Power management and switching circuits.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive and industrial control systems.
  • Consumer electronics requiring high reliability and efficiency.

Q & A

  1. What is the maximum operating voltage of the NTMD5838NLR2G MOSFET?
    The maximum operating voltage is 40 V.
  2. What is the maximum continuous drain current per channel?
    The maximum continuous drain current per channel is 7.4 A.
  3. What is the packaging type of the NTMD5838NLR2G?
    The packaging type is 8-SOIC, Pb-Free, and it is available in tape and reel format.
  4. What is the maximum operating temperature of the NTMD5838NLR2G?
    The maximum operating temperature is +150°C.
  5. Is the NTMD5838NLR2G Pb-Free?
    Yes, the NTMD5838NLR2G is Pb-Free, making it compliant with environmental regulations.
  6. What are some common applications of the NTMD5838NLR2G?
    Common applications include power management, motor control, high-frequency switching, automotive systems, and industrial control systems.
  7. What is the power dissipation of the NTMD5838NLR2G?
    The maximum power dissipation is 3 W.
  8. Is the NTMD5838NLR2G suitable for high-frequency switching applications?
    Yes, it is suitable for high-frequency switching applications due to its robust electrical characteristics.
  9. Where can I find detailed specifications for the NTMD5838NLR2G?
    Detailed specifications can be found in the datasheet available on onsemi’s official website or through distributors like Digi-Key and Mouser Electronics.
  10. What is the channel mode of the NTMD5838NLR2G?
    The channel mode is Enhancement, Dual N-Channel.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:7.4A
Rds On (Max) @ Id, Vgs:25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:785pF @ 20V
Power - Max:2.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$0.85
675

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTMD5838NLR2G NTMD5836NLR2G
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V
Current - Continuous Drain (Id) @ 25°C 7.4A 9A, 5.7A
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 20V 2120pF @ 20V
Power - Max 2.1W 1.5W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
IRF7343TRPBF
IRF7343TRPBF
Infineon Technologies
MOSFET N/P-CH 55V 8-SOIC
BUK7K17-60EX
BUK7K17-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 30A 56LFPAK
NTZD5110NT1G
NTZD5110NT1G
onsemi
MOSFET 2N-CH 60V 294MA SOT563
NTZD3154NT5G
NTZD3154NT5G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
STS4DNF60L
STS4DNF60L
STMicroelectronics
MOSFET 2N-CH 60V 4A 8-SOIC
2N7002DWQ-13-F
2N7002DWQ-13-F
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 10K
PMDPB80XP,115
PMDPB80XP,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 2.7A 6HUSON
ECH8668-TL-H
ECH8668-TL-H
onsemi
MOSFET N/P-CH 20V 7.5A/5A ECH8
PHKD13N03LT,118
PHKD13N03LT,118
Nexperia USA Inc.
MOSFET 2N-CH 30V 10.4A 8SOIC
BSS84AKS/ZLX
BSS84AKS/ZLX
Nexperia USA Inc.
MOSFET 2 P-CH 50V 160MA 6TSSOP
BSS84V-7-79
BSS84V-7-79
Diodes Incorporated
DIODE

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB