MPSA29_D75Z
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onsemi MPSA29_D75Z

Manufacturer No:
MPSA29_D75Z
Manufacturer:
onsemi
Package:
Tape & Box (TB)
Description:
TRANS NPN DARL 100V 0.8A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA29_D75Z is an NPN Darlington transistor manufactured by ON Semiconductor (formerly AMI Semiconductor). This bipolar junction transistor (BJT) is designed for a variety of applications requiring high current gain and robust performance. The MPSA29_D75Z features a collector-emitter breakdown voltage of 100V, a maximum collector current of 800mA, and a transition frequency of 125MHz. It is packaged in a TO-92-3 case, making it suitable for through-hole mounting. This transistor is RoHS compliant and lead-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Value Units
Manufacturer ON Semiconductor / AMI Semiconductor
Transistor Type NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 800 mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA V
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
Power - Max 625 mW
Frequency - Transition 125 MHz
Operating Temperature -55°C ~ 150°C (TJ) °C
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • High Current Gain: The MPSA29_D75Z offers a high DC current gain (hFE) of 10000, making it suitable for applications requiring significant current amplification.
  • Robust Performance: With a collector-emitter breakdown voltage of 100V and a maximum collector current of 800mA, this transistor is designed for robust performance in various applications.
  • High Transition Frequency: The transistor has a transition frequency of 125MHz, which is beneficial for high-frequency applications.
  • Environmental Compliance: It is lead-free and RoHS compliant, ensuring it meets environmental and regulatory standards.
  • Space and Component Efficiency: The MPSA29_D75Z reduces component count and board space, simplifying circuit design and enhancing overall system efficiency.

Applications

  • Print Hammer Drivers: Suitable for driving print hammers in printing machinery.
  • Relay Drivers: Can be used to drive relays in various control systems.
  • Solenoid Drivers: Ideal for driving solenoids in hydraulic and pneumatic systems.
  • Lamp Drivers: Used in lighting systems to drive lamps efficiently.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the MPSA29_D75Z?

    The maximum collector-emitter breakdown voltage is 100V.

  2. What is the maximum collector current of the MPSA29_D75Z?

    The maximum collector current is 800mA.

  3. What is the transition frequency of the MPSA29_D75Z?

    The transition frequency is 125MHz.

  4. Is the MPSA29_D75Z RoHS compliant?

    Yes, the MPSA29_D75Z is lead-free and RoHS compliant.

  5. What is the operating temperature range of the MPSA29_D75Z?

    The operating temperature range is -55°C to 150°C (TJ).

  6. What type of mounting does the MPSA29_D75Z use?

    The MPSA29_D75Z uses through-hole mounting.

  7. What is the package type of the MPSA29_D75Z?

    The package type is TO-226-3, TO-92-3 (TO-226AA) (Formed Leads).

  8. What are some common applications of the MPSA29_D75Z?

    Common applications include print hammer drivers, relay drivers, solenoid drivers, and lamp drivers.

  9. What is the DC current gain (hFE) of the MPSA29_D75Z?

    The DC current gain (hFE) is 10000 at 100mA and 5V.

  10. What is the maximum power dissipation of the MPSA29_D75Z?

    The maximum power dissipation is 625mW.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Same Series
MPSA29_D27Z
MPSA29_D27Z
TRANS NPN DARL 100V 0.8A TO92-3
MPSA29_D75Z
MPSA29_D75Z
TRANS NPN DARL 100V 0.8A TO92-3

Similar Products

Part Number MPSA29_D75Z MPSA27_D75Z MPSA28_D75Z
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 800 mA 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 625 mW 625 mW 625 mW
Frequency - Transition 125MHz 125MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3

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