MMBT4401LT3G
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onsemi MMBT4401LT3G

Manufacturer No:
MMBT4401LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT4401LT3G is a high-performance NPN silicon switching transistor manufactured by onsemi. This device is designed for a wide range of applications, including automotive and other sectors that require stringent quality and reliability standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. The transistor is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with global environmental regulations.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 600 mAdc
Collector Current - Peak ICM 900 mAdc
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RθJA 556 °C/W
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 20 - 40 -
Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VCE(sat) 0.4 Vdc
Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) 0.75 - 0.95 Vdc
Current-Gain-Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 MHz

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Ensures high reliability and quality for automotive and industrial applications.
  • Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Meets global environmental standards.
  • High DC Current Gain: hFE ranges from 20 to 300, depending on the collector current.
  • Low Collector-Emitter Saturation Voltage: VCE(sat) as low as 0.4 Vdc.
  • High Current-Gain-Bandwidth Product: fT of 250 MHz.
  • Fast Switching Times: Delay time of 15 ns, rise time of 20 ns, storage time of 225 ns, and fall time of 30 ns.
  • Wide Operating Temperature Range: Junction and storage temperature from -55°C to +150°C.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Used in industrial control circuits requiring high reliability and performance.
  • Power Management: Can be used in power management circuits due to its high current handling and low saturation voltage.
  • Audio and Signal Amplification: Suitable for audio and signal amplification applications due to its high current gain and bandwidth product.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT4401LT3G?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the continuous collector current rating of the MMBT4401LT3G?

    The continuous collector current (IC) is 600 mAdc.

  3. Is the MMBT4401LT3G RoHS compliant?

    Yes, the MMBT4401LT3G is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  4. What is the thermal resistance of the MMBT4401LT3G on an FR-5 board?

    The thermal resistance (RθJA) on an FR-5 board is 556 °C/W.

  5. What is the current-gain-bandwidth product of the MMBT4401LT3G?

    The current-gain-bandwidth product (fT) is 250 MHz.

  6. What are the typical delay, rise, storage, and fall times of the MMBT4401LT3G?

    The typical delay time is 15 ns, rise time is 20 ns, storage time is 225 ns, and fall time is 30 ns.

  7. What is the operating temperature range of the MMBT4401LT3G?

    The junction and storage temperature range is from -55°C to +150°C.

  8. Is the MMBT4401LT3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What package type does the MMBT4401LT3G come in?

    The MMBT4401LT3G comes in a SOT-23 (TO-236) package.

  10. What are some common applications of the MMBT4401LT3G?

    Common applications include automotive systems, industrial control systems, power management, and audio and signal amplification.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 1V
Power - Max:300 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
MMBT4401LT3G
MMBT4401LT3G
TRANS NPN 40V 0.6A SOT23-3
SMMBT4401LT1G
SMMBT4401LT1G
TRANS NPN 40V 0.6A SOT23-3

Similar Products

Part Number MMBT4401LT3G MMBT5401LT3G MMBT4403LT3G MMBT4401LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN PNP PNP NPN
Current - Collector (Ic) (Max) 600 mA 500 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 150 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA 500mV @ 5mA, 50mA 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - 50nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V 60 @ 10mA, 5V 100 @ 150mA, 2V 100 @ 150mA, 1V
Power - Max 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 250MHz 300MHz 200MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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