Overview
The MMBT4401LT3G is a high-performance NPN silicon switching transistor manufactured by onsemi. This device is designed for a wide range of applications, including automotive and other sectors that require stringent quality and reliability standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. The transistor is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with global environmental regulations.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Collector Current - Peak | ICM | 900 | mAdc |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) | hFE | 20 - 40 | - |
| Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VCE(sat) | 0.4 | Vdc |
| Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VBE(sat) | 0.75 - 0.95 | Vdc |
| Current-Gain-Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) | fT | 250 | MHz |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Ensures high reliability and quality for automotive and industrial applications.
- Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Meets global environmental standards.
- High DC Current Gain: hFE ranges from 20 to 300, depending on the collector current.
- Low Collector-Emitter Saturation Voltage: VCE(sat) as low as 0.4 Vdc.
- High Current-Gain-Bandwidth Product: fT of 250 MHz.
- Fast Switching Times: Delay time of 15 ns, rise time of 20 ns, storage time of 225 ns, and fall time of 30 ns.
- Wide Operating Temperature Range: Junction and storage temperature from -55°C to +150°C.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Control Systems: Used in industrial control circuits requiring high reliability and performance.
- Power Management: Can be used in power management circuits due to its high current handling and low saturation voltage.
- Audio and Signal Amplification: Suitable for audio and signal amplification applications due to its high current gain and bandwidth product.
Q & A
- What is the maximum collector-emitter voltage of the MMBT4401LT3G?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the continuous collector current rating of the MMBT4401LT3G?
The continuous collector current (IC) is 600 mAdc.
- Is the MMBT4401LT3G RoHS compliant?
Yes, the MMBT4401LT3G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the thermal resistance of the MMBT4401LT3G on an FR-5 board?
The thermal resistance (RθJA) on an FR-5 board is 556 °C/W.
- What is the current-gain-bandwidth product of the MMBT4401LT3G?
The current-gain-bandwidth product (fT) is 250 MHz.
- What are the typical delay, rise, storage, and fall times of the MMBT4401LT3G?
The typical delay time is 15 ns, rise time is 20 ns, storage time is 225 ns, and fall time is 30 ns.
- What is the operating temperature range of the MMBT4401LT3G?
The junction and storage temperature range is from -55°C to +150°C.
- Is the MMBT4401LT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What package type does the MMBT4401LT3G come in?
The MMBT4401LT3G comes in a SOT-23 (TO-236) package.
- What are some common applications of the MMBT4401LT3G?
Common applications include automotive systems, industrial control systems, power management, and audio and signal amplification.
