Overview
The MMBT5401LT3G is a high-voltage PNP silicon transistor manufactured by onsemi. This device is part of the MMBT5401L series, which includes variants such as SMMBT5401L and NSVMMBT5401L, designed for various applications including automotive and other sectors requiring unique site and control change requirements. The MMBT5401LT3G is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | -150 | Vdc |
Collector-Base Voltage | VCBO | -160 | Vdc |
Emitter-Base Voltage | VEBO | -5.0 | Vdc |
Collector Current - Continuous | IC | -500 | mAdc |
Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | Vdc |
Collector-Base Breakdown Voltage | V(BR)CBO | -160 | Vdc |
Emitter-Base Breakdown Voltage | V(BR)EBO | -5.0 | Vdc |
DC Current Gain (IC = -1.0 mA, VCE = -5.0 V) | hFE | 50 - 240 | |
Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) | VCE(sat) | -0.2 | Vdc |
Base-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) | VBE(sat) | -1.0 | Vdc |
Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
- High voltage ratings: VCEO = -150 Vdc, VCBO = -160 Vdc, and VEBO = -5.0 Vdc.
- Continuous collector current of -500 mA.
- Wide operating temperature range: -55°C to +150°C.
- Small signal current gain (hFE) ranging from 50 to 240.
- Low collector-emitter and base-emitter saturation voltages.
- Compact SOT-23 (TO-236) package.
Applications
The MMBT5401LT3G is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as power management, signal amplification, and switching circuits.
- Industrial control systems: Its high voltage and current handling capabilities make it suitable for industrial control and automation.
- Consumer electronics: It can be used in audio amplifiers, power supplies, and other consumer electronic devices requiring reliable and efficient transistor performance.
- Medical devices: The device's reliability and compliance with environmental standards make it a candidate for use in medical equipment.
Q & A
- What is the maximum collector-emitter voltage of the MMBT5401LT3G?
The maximum collector-emitter voltage (VCEO) is -150 Vdc. - Is the MMBT5401LT3G RoHS compliant?
Yes, the MMBT5401LT3G is RoHS compliant, Pb-free, and halogen-free/BFR-free. - What is the continuous collector current rating of the MMBT5401LT3G?
The continuous collector current (IC) is -500 mA. - What is the operating temperature range of the MMBT5401LT3G?
The operating temperature range is -55°C to +150°C. - What package type is the MMBT5401LT3G available in?
The MMBT5401LT3G is available in the SOT-23 (TO-236) package. - Is the MMBT5401LT3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. - What are the typical values for DC current gain (hFE) of the MMBT5401LT3G?
The DC current gain (hFE) ranges from 50 to 240. - What is the thermal resistance, junction-to-ambient (RJA) for the MMBT5401LT3G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W. - What are the collector-emitter and base-emitter saturation voltages of the MMBT5401LT3G?
The collector-emitter saturation voltage (VCE(sat)) is typically -0.2 Vdc, and the base-emitter saturation voltage (VBE(sat)) is typically -1.0 Vdc. - Can the MMBT5401LT3G be used in medical devices?
Yes, its reliability and compliance with environmental standards make it a candidate for use in medical equipment.