MMBT5401LT3G
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onsemi MMBT5401LT3G

Manufacturer No:
MMBT5401LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 150V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT5401LT3G is a high-voltage PNP silicon transistor manufactured by onsemi. This device is part of the MMBT5401L series, which includes variants such as SMMBT5401L and NSVMMBT5401L, designed for various applications including automotive and other sectors requiring unique site and control change requirements. The MMBT5401LT3G is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO-150Vdc
Collector-Base VoltageVCBO-160Vdc
Emitter-Base VoltageVEBO-5.0Vdc
Collector Current - ContinuousIC-500mAdc
Collector-Emitter Breakdown VoltageV(BR)CEO-150Vdc
Collector-Base Breakdown VoltageV(BR)CBO-160Vdc
Emitter-Base Breakdown VoltageV(BR)EBO-5.0Vdc
DC Current Gain (IC = -1.0 mA, VCE = -5.0 V)hFE50 - 240
Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA)VCE(sat)-0.2Vdc
Base-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA)VBE(sat)-1.0Vdc
Junction and Storage TemperatureTJ, Tstg-55 to +150°C
Thermal Resistance, Junction-to-Ambient (FR-5 Board)RJA556°C/W

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
  • High voltage ratings: VCEO = -150 Vdc, VCBO = -160 Vdc, and VEBO = -5.0 Vdc.
  • Continuous collector current of -500 mA.
  • Wide operating temperature range: -55°C to +150°C.
  • Small signal current gain (hFE) ranging from 50 to 240.
  • Low collector-emitter and base-emitter saturation voltages.
  • Compact SOT-23 (TO-236) package.

Applications

The MMBT5401LT3G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as power management, signal amplification, and switching circuits.
  • Industrial control systems: Its high voltage and current handling capabilities make it suitable for industrial control and automation.
  • Consumer electronics: It can be used in audio amplifiers, power supplies, and other consumer electronic devices requiring reliable and efficient transistor performance.
  • Medical devices: The device's reliability and compliance with environmental standards make it a candidate for use in medical equipment.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT5401LT3G?
    The maximum collector-emitter voltage (VCEO) is -150 Vdc.
  2. Is the MMBT5401LT3G RoHS compliant?
    Yes, the MMBT5401LT3G is RoHS compliant, Pb-free, and halogen-free/BFR-free.
  3. What is the continuous collector current rating of the MMBT5401LT3G?
    The continuous collector current (IC) is -500 mA.
  4. What is the operating temperature range of the MMBT5401LT3G?
    The operating temperature range is -55°C to +150°C.
  5. What package type is the MMBT5401LT3G available in?
    The MMBT5401LT3G is available in the SOT-23 (TO-236) package.
  6. Is the MMBT5401LT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  7. What are the typical values for DC current gain (hFE) of the MMBT5401LT3G?
    The DC current gain (hFE) ranges from 50 to 240.
  8. What is the thermal resistance, junction-to-ambient (RJA) for the MMBT5401LT3G on an FR-5 board?
    The thermal resistance, junction-to-ambient (RJA) is 556 °C/W.
  9. What are the collector-emitter and base-emitter saturation voltages of the MMBT5401LT3G?
    The collector-emitter saturation voltage (VCE(sat)) is typically -0.2 Vdc, and the base-emitter saturation voltage (VBE(sat)) is typically -1.0 Vdc.
  10. Can the MMBT5401LT3G be used in medical devices?
    Yes, its reliability and compliance with environmental standards make it a candidate for use in medical equipment.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):150 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
MMBT5401LT1G
MMBT5401LT1G
TRANS PNP 150V 0.5A SOT23-3
SMMBT5401LT1G
SMMBT5401LT1G
TRANS PNP 150V 0.5A SOT23-3
NSVMMBT5401LT3G
NSVMMBT5401LT3G
TRANS PNP 150V 0.5A SOT23-3
MMBT5401LT3
MMBT5401LT3
TRANS PNP 150V 0.5A SOT23-3

Similar Products

Part Number MMBT5401LT3G MMBT4401LT3G MMBT5401LT1G MMBT5401LT3
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 500 mA 600 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 150 V 40 V 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 750mV @ 50mA, 500mA 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) - 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V 100 @ 150mA, 1V 60 @ 10mA, 5V 60 @ 10mA, 5V
Power - Max 300 mW 300 mW 300 mW 300 mW
Frequency - Transition 300MHz 250MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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