Overview
The SMMBT5401LT1G is a high-voltage PNP silicon transistor manufactured by onsemi. This device is part of the MMBT5401L series, which includes variants such as the SMMBT5401L and NSVMMBT5401L, designed for various applications including automotive and other sectors requiring unique site and control change requirements. The SMMBT5401LT1G is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -150 | Vdc |
| Collector-Base Voltage | VCBO | -160 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -500 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | -160 | Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5.0 | Vdc |
| DC Current Gain (IC = -1.0 mA, VCE = -5.0 V) | hFE | 50 - 240 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) | VCE(sat) | -0.2 | Vdc |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) | VBE(sat) | -1.0 | Vdc |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
- High collector-emitter voltage (VCEO) of -150 Vdc and high collector-base voltage (VCBO) of -160 Vdc.
- Continuous collector current (IC) of -500 mAdc.
- Wide operating temperature range from -55°C to +150°C.
- Small signal current gain (hfe) ranging from 40 to 200.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Compact SOT-23 (TO-236) package.
Applications
- Automotive systems requiring high reliability and compliance with automotive standards.
- General-purpose amplifiers and switching applications.
- Power management circuits where high voltage handling is necessary.
- Industrial control systems and automation.
- Consumer electronics requiring robust and reliable transistor performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the SMMBT5401LT1G?
The maximum collector-emitter voltage (VCEO) is -150 Vdc.
- Is the SMMBT5401LT1G suitable for automotive applications?
- What is the continuous collector current (IC) rating of the SMMBT5401LT1G?
The continuous collector current (IC) is -500 mAdc.
- What is the operating temperature range of the SMMBT5401LT1G?
The operating temperature range is from -55°C to +150°C.
- Is the SMMBT5401LT1G environmentally friendly?
- What is the package type of the SMMBT5401LT1G?
The package type is SOT-23 (TO-236).
- What are the typical applications of the SMMBT5401LT1G?
It is used in automotive systems, general-purpose amplifiers, power management circuits, industrial control systems, and consumer electronics.
- What is the DC current gain (hFE) range of the SMMBT5401LT1G?
The DC current gain (hFE) ranges from 50 to 240.
- What is the thermal resistance, junction-to-ambient (RJA) of the SMMBT5401LT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W.
- How does the SMMBT5401LT1G handle high voltage and current?
The device is designed to handle high collector-emitter and collector-base voltages, along with a moderate continuous collector current, making it suitable for high voltage and current applications.
