Overview
The SMMBT4401LT1G is a high-performance NPN silicon switching transistor manufactured by onsemi. This device is designed for a wide range of applications, including automotive and other sectors that require stringent quality and reliability standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. The transistor is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Collector Current - Peak | ICM | 900 | mAdc |
| Maximum Operating Junction Temperature | TJ | 150 | °C |
| Transition Frequency | fT | 250 | MHz |
| Collector-Base Capacitance | Ccb | 6.5 | pF |
| Emitter-Base Capacitance | Ceb | 30 | pF |
| DC Current Gain (hFE) | hFE | 100 (min) | - |
| Package | - | SOT-23 | - |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High DC current gain (hFE) with a minimum value of 100.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.4 V to 0.75 V.
- Fast switching times with a delay time (td) of 15 ns, rise time (tr) of 20 ns, and fall time (tf) of 30 ns.
- High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
- Compact SOT-23 package, ideal for space-constrained designs.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial control: Used in industrial control systems where high reliability and performance are required.
- Power management: Can be used in power management circuits due to its high current handling and low saturation voltage.
- High-frequency circuits: Applicable in high-frequency applications such as RF amplifiers and switching circuits.
- General-purpose switching: Ideal for general-purpose switching applications where fast switching times and high current gain are necessary.
Q & A
- What is the maximum collector-emitter voltage of the SMMBT4401LT1G transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the package type of the SMMBT4401LT1G transistor?
The transistor is packaged in a SOT-23 package.
- Is the SMMBT4401LT1G transistor RoHS compliant?
Yes, the transistor is Pb-free, halogen-free, and RoHS compliant.
- What is the maximum operating junction temperature of the SMMBT4401LT1G transistor?
The maximum operating junction temperature (TJ) is 150°C.
- What is the transition frequency (fT) of the SMMBT4401LT1G transistor?
The transition frequency (fT) is 250 MHz.
- What are the typical applications of the SMMBT4401LT1G transistor?
Typical applications include automotive systems, industrial control, power management, high-frequency circuits, and general-purpose switching.
- What is the DC current gain (hFE) of the SMMBT4401LT1G transistor?
The minimum DC current gain (hFE) is 100.
- What are the switching times of the SMMBT4401LT1G transistor?
The delay time (td) is 15 ns, the rise time (tr) is 20 ns, and the fall time (tf) is 30 ns.
- Is the SMMBT4401LT1G transistor suitable for high-frequency applications?
Yes, due to its high transition frequency (fT) of 250 MHz, it is suitable for high-frequency applications.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SMMBT4401LT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) ranges from 0.4 V to 0.75 V.
