Overview
The SMMBT4403LT1G is a PNP silicon switching transistor manufactured by ON Semiconductor. This device is designed for high-performance switching applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -600 | mAdc |
| Collector Current - Peak | ICM | -900 | mAdc |
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- High DC current gain (hFE) ranging from 30 to 300.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Fast switching times with delay time (td) of 15 ns, rise time (tr) of 20 ns, and fall time (tf) of 30 ns.
- Small-signal characteristics include a current-gain bandwidth product (fT) of 200 MHz.
Applications
- Automotive systems requiring high reliability and performance.
- General-purpose switching applications.
- Audio and video equipment.
- Industrial control systems.
- Consumer electronics.
Q & A
- What is the maximum collector-emitter voltage for the SMMBT4403LT1G?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- Is the SMMBT4403LT1G RoHS compliant?
- What is the typical DC current gain (hFE) of the SMMBT4403LT1G?
The DC current gain (hFE) ranges from 30 to 300.
- What are the thermal characteristics of the SMMBT4403LT1G?
The total device dissipation on an FR-5 board is 225 mW, and the thermal resistance, junction-to-ambient, is 556 °C/W.
- What are the switching times for the SMMBT4403LT1G?
The delay time (td) is 15 ns, the rise time (tr) is 20 ns, and the fall time (tf) is 30 ns.
- What is the junction and storage temperature range for the SMMBT4403LT1G?
The junction and storage temperature range is -55 to +150 °C.
- Is the SMMBT4403LT1G suitable for automotive applications?
- What is the package type of the SMMBT4403LT1G?
The device is packaged in a SOT-23 (TO-236) case.
- What are the typical collector-emitter and base-emitter saturation voltages?
The collector-emitter saturation voltage (VCE(sat)) is typically -0.4 to -0.75 Vdc, and the base-emitter saturation voltage (VBE(sat)) is typically -0.75 to -1.3 Vdc.
- What is the current-gain bandwidth product (fT) of the SMMBT4403LT1G?
The current-gain bandwidth product (fT) is 200 MHz.
