Overview
The MMBT4403LT3G is a PNP general-purpose amplifier and switching transistor produced by onsemi. This device is designed for use in a wide range of applications requiring collector currents up to 600 mA. It is packaged in a SOT-23 (TO-236) case, making it suitable for space-constrained designs. The MMBT4403LT3G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -600 | mAdc |
| Collector Current - Peak | ICM | -900 | mAdc |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) | hFE | 30 - 60 | - |
| Collector-Emitter Saturation Voltage (IC = -150 mAdc, IB = -15 mAdc) | VCE(sat) | -0.4 - 0.75 | Vdc |
| Base-Emitter Saturation Voltage (IC = -150 mAdc, IB = -15 mAdc) | VBE(sat) | -0.75 - 0.95 | Vdc |
| Current-Gain-Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) | fT | 200 | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- General-purpose amplifier and switching transistor.
- Collector currents up to 600 mA.
- SOT-23 (TO-236) package for compact designs.
- High DC current gain (hFE) ranging from 30 to 60.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current-gain-bandwidth product (fT) of 200 MHz.
Applications
- General-purpose amplification in electronic circuits.
- Switching applications requiring high current handling.
- Automotive systems due to its AEC-Q101 qualification.
- Consumer electronics where space is a constraint.
- Industrial control systems and automation.
Q & A
- What is the maximum collector-emitter voltage for the MMBT4403LT3G?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- What is the continuous collector current rating of the MMBT4403LT3G?
The continuous collector current (IC) is -600 mAdc.
- Is the MMBT4403LT3G RoHS compliant?
- What is the thermal resistance, junction-to-ambient (RθJA) for the MMBT4403LT3G?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
- What is the DC current gain (hFE) range for the MMBT4403LT3G?
The DC current gain (hFE) ranges from 30 to 60.
- What is the current-gain-bandwidth product (fT) of the MMBT4403LT3G?
The current-gain-bandwidth product (fT) is 200 MHz.
- What are the typical applications for the MMBT4403LT3G?
The MMBT4403LT3G is used in general-purpose amplification, switching applications, automotive systems, consumer electronics, and industrial control systems.
- What is the package type of the MMBT4403LT3G?
The MMBT4403LT3G is packaged in a SOT-23 (TO-236) case.
- Is the MMBT4403LT3G suitable for high-temperature environments?
The MMBT4403LT3G has a junction and storage temperature range of -55 to +150 °C, making it suitable for a wide range of temperature environments.
- What are the benefits of the MMBT4403LT3G being AEC-Q101 qualified?
Being AEC-Q101 qualified ensures that the MMBT4403LT3G meets the stringent requirements for automotive applications, enhancing its reliability and performance in such environments.
