Overview
The MMBT4403LT1G is a PNP general-purpose amplifier transistor manufactured by onsemi. This device is part of the MMBT4403 series and is known for its reliability and versatility in various electronic applications. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. The transistor is Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Continuous Collector Current | IC | -600 | mAdc |
| Peak Collector Current | ICM | -900 | mAdc |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Derate Above 25°C | 1.8 | mW/°C | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Current-Gain Bandwidth Product (fT) | fT | 200 | MHz |
| Collector-Base Capacitance (Ccb) | Ccb | 8.5 | pF |
| Emitter-Base Capacitance (Ceb) | Ceb | 30 | pF |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- High current gain with a minimum DC current gain (hFE) of 30 at IC = -0.1 mA and VCE = -1.0 V.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Fast switching times with delay time (td) of 15 ns, rise time (tr) of 20 ns, storage time (ts) of 225 ns, and fall time (tf) of 30 ns.
- High frequency performance with a current-gain bandwidth product (fT) of 200 MHz.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- General-purpose amplification: Used in common emitter, common collector, and common base configurations.
- Switching circuits: Ideal for high-speed switching applications due to its fast switching times.
- Audio and signal processing: Can be used in audio amplifiers and signal processing circuits.
- Industrial control systems: Suitable for use in industrial control and automation systems.
Q & A
- What is the maximum collector-emitter voltage of the MMBT4403LT1G transistor?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- What is the continuous collector current rating of the MMBT4403LT1G?
The continuous collector current (IC) is -600 mAdc.
- Is the MMBT4403LT1G RoHS compliant?
- What is the thermal resistance, junction-to-ambient (RθJA) of the MMBT4403LT1G?
The thermal resistance, junction-to-ambient (RθJA) is 417 °C/W.
- What is the current-gain bandwidth product (fT) of the MMBT4403LT1G?
The current-gain bandwidth product (fT) is 200 MHz.
- What are the typical switching times for the MMBT4403LT1G transistor?
The typical switching times are: delay time (td) of 15 ns, rise time (tr) of 20 ns, storage time (ts) of 225 ns, and fall time (tf) of 30 ns.
- Is the MMBT4403LT1G suitable for automotive applications?
- What is the package type of the MMBT4403LT1G transistor?
The package type is SOT-23.
- What is the operating and storage junction temperature range for the MMBT4403LT1G?
The operating and storage junction temperature range is -55 to +150 °C.
- What are some common applications of the MMBT4403LT1G transistor?
