MMBT4403LT1
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onsemi MMBT4403LT1

Manufacturer No:
MMBT4403LT1
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 40V 600MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT4403LT1 is a PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for switching applications and is known for its high reliability and performance. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. The device is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)-40Vdc
Collector-Base Voltage (VCBO)-40Vdc
Emitter-Base Voltage (VEBO)-5.0Vdc
Collector Current - Continuous (IC)-600mAdc
Collector Current - Peak (ICM)-900mAdc
Junction and Storage Temperature (TJ, Tstg)-55 to +150°C
Total Device Dissipation (PD) @ TA = 25°C225mW
Thermal Resistance, Junction-to-Ambient (RθJA)417°C/W
Base-Emitter Saturation Voltage (VBE(sat))-0.75 to -1.3Vdc
Collector-Base Capacitance (Ccb)-8.5pF
Emitter-Base Capacitance (Ceb)-30pF
Transition Frequency (fT)200MHz

Key Features

  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Lead-free, halogen-free, and RoHS compliant.
  • High collector current capability up to 600 mA.
  • Low base-emitter saturation voltage (VBE(sat)) of -0.75 to -1.3 V.
  • High transition frequency of 200 MHz.
  • Surface mount package (SOT-23-3) for compact design.

Applications

The MMBT4403LT1 is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Switching circuits: Its high transition frequency and low saturation voltage make it ideal for switching applications.
  • General-purpose amplification: It can be used in amplifier circuits where high current gain and low noise are required.
  • Consumer electronics: Suitable for use in various consumer electronic devices requiring reliable switching performance.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT4403LT1?
    The maximum collector-emitter voltage (VCEO) is -40 Vdc.
  2. What is the continuous collector current rating of the MMBT4403LT1?
    The continuous collector current (IC) is -600 mAdc.
  3. Is the MMBT4403LT1 RoHS compliant?
    Yes, the MMBT4403LT1 is lead-free, halogen-free, and RoHS compliant.
  4. What is the transition frequency of the MMBT4403LT1?
    The transition frequency (fT) is 200 MHz.
  5. What is the operating temperature range of the MMBT4403LT1?
    The operating temperature range is -55°C to +150°C.
  6. What package type is the MMBT4403LT1 available in?
    The MMBT4403LT1 is available in a SOT-23-3 (TO-236) surface mount package.
  7. Is the MMBT4403LT1 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  8. What is the base-emitter saturation voltage range of the MMBT4403LT1?
    The base-emitter saturation voltage (VBE(sat)) range is -0.75 to -1.3 V.
  9. What is the thermal resistance, junction-to-ambient (RθJA) of the MMBT4403LT1?
    The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
  10. What is the maximum total device dissipation of the MMBT4403LT1 at 25°C?
    The maximum total device dissipation (PD) at 25°C is 225 mW.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:225 mW
Frequency - Transition:200MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBT4403LT1 MMBT4403LT1G MMBT4403LT3 MMBT4401LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
Transistor Type PNP PNP PNP NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 1V
Power - Max 225 mW 300 mW 300 mW 225 mW
Frequency - Transition 200MHz 200MHz 200MHz 250MHz
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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