MMBT4401LT1
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onsemi MMBT4401LT1

Manufacturer No:
MMBT4401LT1
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 40V 600MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT4401LT1 is a high-performance NPN silicon switching transistor manufactured by onsemi. This device is designed for a wide range of applications, including automotive and other sectors that require stringent quality and reliability standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of the automotive industry. The transistor is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO40Vdc
Collector-Base VoltageVCBO60Vdc
Emitter-Base VoltageVEBO6.0Vdc
Collector Current - ContinuousIC600mAdc
Collector Current - PeakICM900mAdc
Thermal Resistance, Junction-to-Ambient (FR-5 Board)RθJA556°C/W
Thermal Resistance, Junction-to-Ambient (Alumina Substrate)RθJA417°C/W
Junction and Storage TemperatureTJ, Tstg-55 to +150°C
DC Current Gain (IC = 0.1 mA, VCE = 1.0 V)hFE20 - 40-
Collector-Emitter Saturation Voltage (IC = 150 mA, IB = 15 mA)VCE(sat)0.4Vdc
Base-Emitter Saturation Voltage (IC = 150 mA, IB = 15 mA)VBE(sat)0.75 - 0.95Vdc
Current-Gain-Bandwidth Product (IC = 20 mA, VCE = 10 V, f = 100 MHz)fT250MHz

Key Features

  • AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly option.
  • High DC current gain (hFE) ranging from 20 to 300.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • High current-gain-bandwidth product (fT) of 250 MHz.
  • Fast switching times with delay time (td) of 15 ns, rise time (tr) of 20 ns, storage time (ts) of 225 ns, and fall time (tf) of 30 ns.
  • Small signal characteristics include low input impedance and high output admittance.

Applications

The MMBT4401LT1 is suitable for a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics such as ignition systems, fuel injectors, and other high-reliability applications.
  • Switching circuits: Its fast switching times and low saturation voltages make it a good choice for high-speed switching applications.
  • Amplifier circuits: The high DC current gain and low noise figure make it suitable for amplifier circuits in audio and other signal processing applications.
  • General-purpose electronics: It can be used in various general-purpose electronic circuits requiring a reliable and efficient switching transistor.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the MMBT4401LT1?
    The maximum collector-emitter voltage (VCEO) is 40 Vdc.
  2. What is the continuous collector current (IC) rating of the MMBT4401LT1?
    The continuous collector current (IC) rating is 600 mAdc.
  3. Is the MMBT4401LT1 RoHS compliant?
    Yes, the MMBT4401LT1 is Pb-free, halogen-free, and RoHS compliant.
  4. What is the thermal resistance, junction-to-ambient (RθJA) for the FR-5 board?
    The thermal resistance, junction-to-ambient (RθJA) for the FR-5 board is 556 °C/W.
  5. What is the current-gain-bandwidth product (fT) of the MMBT4401LT1?
    The current-gain-bandwidth product (fT) is 250 MHz.
  6. What are the typical delay, rise, storage, and fall times for the MMBT4401LT1?
    The typical delay time (td) is 15 ns, rise time (tr) is 20 ns, storage time (ts) is 225 ns, and fall time (tf) is 30 ns.
  7. Is the MMBT4401LT1 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  8. What is the base-emitter saturation voltage (VBE(sat)) for the MMBT4401LT1?
    The base-emitter saturation voltage (VBE(sat)) ranges from 0.75 to 0.95 Vdc.
  9. What is the junction and storage temperature range for the MMBT4401LT1?
    The junction and storage temperature range is -55 to +150 °C.
  10. What package type is the MMBT4401LT1 available in?
    The MMBT4401LT1 is available in the SOT-23 (TO-236) package.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 1V
Power - Max:225 mW
Frequency - Transition:250MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBT4401LT1 MMBT4401LT1G MMBT4401LT1H MMBT4403LT1 MMBT4401WT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete
Transistor Type NPN NPN - PNP NPN
Current - Collector (Ic) (Max) 600 mA 600 mA - 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V - 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA - 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V 100 @ 150mA, 1V - 100 @ 150mA, 2V 100 @ 150mA, 1V
Power - Max 225 mW 300 mW - 225 mW 150 mW
Frequency - Transition 250MHz 250MHz - 200MHz 250MHz
Operating Temperature - -55°C ~ 150°C (TJ) - - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) - SOT-23-3 (TO-236) SC-70-3 (SOT323)

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