MMBT4401LT1H
  • Share:

onsemi MMBT4401LT1H

Manufacturer No:
MMBT4401LT1H
Manufacturer:
onsemi
Package:
Bulk
Description:
SS SOT23 GP XSTR NPN 40V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT4401LT1H is an NPN general-purpose amplifier and switching transistor produced by onsemi. This device is designed for medium power amplification and switching applications, requiring collector currents up to 600 mA. It is part of the MMBT4401 series, known for its reliability and versatility in various electronic circuits.

The transistor is housed in an SOT-23 package, which is lead-free, halogen-free, and fully RoHS compliant. This makes it suitable for use in a wide range of applications, including automotive and industrial systems that require high reliability and compliance with environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 600 mAdc
Collector Current - Peak ICM 900 mAdc
Thermal Resistance, Junction-to-Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (hfe) hfe 40 - 500 -
Delay Time td 15 ns
Rise Time tr 20 ns
Storage Time ts 225 ns
Fall Time tf 30 ns

Key Features

  • General-Purpose Amplifier and Switching: Designed for medium power amplification and switching applications.
  • High Current Capability: Continuous collector current up to 600 mA and peak collector current up to 900 mA.
  • Environmental Compliance: Lead-free, halogen-free, and fully RoHS compliant.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Low Noise and High Gain: DC current gain (hfe) ranges from 40 to 500, making it suitable for a variety of amplification tasks.
  • Fast Switching Times: Delay time of 15 ns, rise time of 20 ns, storage time of 225 ns, and fall time of 30 ns.
  • Compact Packaging: SOT-23 package, ideal for space-constrained designs.

Applications

  • Automotive Systems: Suitable for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Used in various industrial control circuits requiring reliable switching and amplification.
  • Consumer Electronics: Found in consumer electronic devices such as audio amplifiers, power supplies, and other general-purpose electronic circuits.
  • Medical Devices: Can be used in medical devices where high reliability and compliance with environmental standards are crucial.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT4401LT1H transistor?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) is 600 mA.

  3. Is the MMBT4401LT1H transistor RoHS compliant?

    Yes, the transistor is lead-free, halogen-free, and fully RoHS compliant.

  4. What is the thermal resistance, junction-to-ambient, of this transistor?

    The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.

  5. What are the typical switching times for the MMBT4401LT1H transistor?

    The delay time is 15 ns, rise time is 20 ns, storage time is 225 ns, and fall time is 30 ns.

  6. Is the MMBT4401LT1H suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  7. What is the package type of the MMBT4401LT1H transistor?

    The transistor is housed in an SOT-23 package.

  8. What is the DC current gain range of the MMBT4401LT1H transistor?

    The DC current gain (hfe) ranges from 40 to 500.

  9. What are the junction and storage temperature ranges for this transistor?

    The junction and storage temperature range is -55 to +150 °C.

  10. Is the MMBT4401LT1H transistor suitable for high-frequency applications?

    Yes, it has a current gain-bandwidth product (fT) of 250 MHz, making it suitable for high-frequency applications.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
72

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MMBT4401LT1H MMBT4401LT1 MMBT4401LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
Transistor Type - NPN NPN
Current - Collector (Ic) (Max) - 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) - 40 V 40 V
Vce Saturation (Max) @ Ib, Ic - 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - 100 @ 150mA, 1V 100 @ 150mA, 1V
Power - Max - 225 mW 300 mW
Frequency - Transition - 250MHz 250MHz
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC