MMBT4401LT1H
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onsemi MMBT4401LT1H

Manufacturer No:
MMBT4401LT1H
Manufacturer:
onsemi
Package:
Bulk
Description:
SS SOT23 GP XSTR NPN 40V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT4401LT1H is an NPN general-purpose amplifier and switching transistor produced by onsemi. This device is designed for medium power amplification and switching applications, requiring collector currents up to 600 mA. It is part of the MMBT4401 series, known for its reliability and versatility in various electronic circuits.

The transistor is housed in an SOT-23 package, which is lead-free, halogen-free, and fully RoHS compliant. This makes it suitable for use in a wide range of applications, including automotive and industrial systems that require high reliability and compliance with environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 600 mAdc
Collector Current - Peak ICM 900 mAdc
Thermal Resistance, Junction-to-Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (hfe) hfe 40 - 500 -
Delay Time td 15 ns
Rise Time tr 20 ns
Storage Time ts 225 ns
Fall Time tf 30 ns

Key Features

  • General-Purpose Amplifier and Switching: Designed for medium power amplification and switching applications.
  • High Current Capability: Continuous collector current up to 600 mA and peak collector current up to 900 mA.
  • Environmental Compliance: Lead-free, halogen-free, and fully RoHS compliant.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Low Noise and High Gain: DC current gain (hfe) ranges from 40 to 500, making it suitable for a variety of amplification tasks.
  • Fast Switching Times: Delay time of 15 ns, rise time of 20 ns, storage time of 225 ns, and fall time of 30 ns.
  • Compact Packaging: SOT-23 package, ideal for space-constrained designs.

Applications

  • Automotive Systems: Suitable for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Used in various industrial control circuits requiring reliable switching and amplification.
  • Consumer Electronics: Found in consumer electronic devices such as audio amplifiers, power supplies, and other general-purpose electronic circuits.
  • Medical Devices: Can be used in medical devices where high reliability and compliance with environmental standards are crucial.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT4401LT1H transistor?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) is 600 mA.

  3. Is the MMBT4401LT1H transistor RoHS compliant?

    Yes, the transistor is lead-free, halogen-free, and fully RoHS compliant.

  4. What is the thermal resistance, junction-to-ambient, of this transistor?

    The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.

  5. What are the typical switching times for the MMBT4401LT1H transistor?

    The delay time is 15 ns, rise time is 20 ns, storage time is 225 ns, and fall time is 30 ns.

  6. Is the MMBT4401LT1H suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  7. What is the package type of the MMBT4401LT1H transistor?

    The transistor is housed in an SOT-23 package.

  8. What is the DC current gain range of the MMBT4401LT1H transistor?

    The DC current gain (hfe) ranges from 40 to 500.

  9. What are the junction and storage temperature ranges for this transistor?

    The junction and storage temperature range is -55 to +150 °C.

  10. Is the MMBT4401LT1H transistor suitable for high-frequency applications?

    Yes, it has a current gain-bandwidth product (fT) of 250 MHz, making it suitable for high-frequency applications.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number MMBT4401LT1H MMBT4401LT1 MMBT4401LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
Transistor Type - NPN NPN
Current - Collector (Ic) (Max) - 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) - 40 V 40 V
Vce Saturation (Max) @ Ib, Ic - 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - 100 @ 150mA, 1V 100 @ 150mA, 1V
Power - Max - 225 mW 300 mW
Frequency - Transition - 250MHz 250MHz
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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