Overview
The MMBT4401LT1H is an NPN general-purpose amplifier and switching transistor produced by onsemi. This device is designed for medium power amplification and switching applications, requiring collector currents up to 600 mA. It is part of the MMBT4401 series, known for its reliability and versatility in various electronic circuits.
The transistor is housed in an SOT-23 package, which is lead-free, halogen-free, and fully RoHS compliant. This makes it suitable for use in a wide range of applications, including automotive and industrial systems that require high reliability and compliance with environmental standards.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 40 | Vdc |
Collector-Base Voltage | VCBO | 60 | Vdc |
Emitter-Base Voltage | VEBO | 6.0 | Vdc |
Collector Current - Continuous | IC | 600 | mAdc |
Collector Current - Peak | ICM | 900 | mAdc |
Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
DC Current Gain (hfe) | hfe | 40 - 500 | - |
Delay Time | td | 15 | ns |
Rise Time | tr | 20 | ns |
Storage Time | ts | 225 | ns |
Fall Time | tf | 30 | ns |
Key Features
- General-Purpose Amplifier and Switching: Designed for medium power amplification and switching applications.
- High Current Capability: Continuous collector current up to 600 mA and peak collector current up to 900 mA.
- Environmental Compliance: Lead-free, halogen-free, and fully RoHS compliant.
- AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
- Low Noise and High Gain: DC current gain (hfe) ranges from 40 to 500, making it suitable for a variety of amplification tasks.
- Fast Switching Times: Delay time of 15 ns, rise time of 20 ns, storage time of 225 ns, and fall time of 30 ns.
- Compact Packaging: SOT-23 package, ideal for space-constrained designs.
Applications
- Automotive Systems: Suitable for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Control Systems: Used in various industrial control circuits requiring reliable switching and amplification.
- Consumer Electronics: Found in consumer electronic devices such as audio amplifiers, power supplies, and other general-purpose electronic circuits.
- Medical Devices: Can be used in medical devices where high reliability and compliance with environmental standards are crucial.
Q & A
- What is the maximum collector-emitter voltage of the MMBT4401LT1H transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 600 mA.
- Is the MMBT4401LT1H transistor RoHS compliant?
Yes, the transistor is lead-free, halogen-free, and fully RoHS compliant.
- What is the thermal resistance, junction-to-ambient, of this transistor?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
- What are the typical switching times for the MMBT4401LT1H transistor?
The delay time is 15 ns, rise time is 20 ns, storage time is 225 ns, and fall time is 30 ns.
- Is the MMBT4401LT1H suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the package type of the MMBT4401LT1H transistor?
The transistor is housed in an SOT-23 package.
- What is the DC current gain range of the MMBT4401LT1H transistor?
The DC current gain (hfe) ranges from 40 to 500.
- What are the junction and storage temperature ranges for this transistor?
The junction and storage temperature range is -55 to +150 °C.
- Is the MMBT4401LT1H transistor suitable for high-frequency applications?
Yes, it has a current gain-bandwidth product (fT) of 250 MHz, making it suitable for high-frequency applications.