Overview
The MMBT4403WT1G is a PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for general-purpose applications and is known for its reliability and performance in a wide range of electronic circuits. It is packaged in the SC-70 (SOT-323) format, making it suitable for surface mount technology (SMT) assembly. The device is RoHS compliant, ensuring it meets environmental standards for lead-free electronics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (Vceo) | -40 | V |
| Collector Current (Ic) | -600 | mA |
| Power Dissipation (Pd) | 150 | mW |
| Current Gain (hfe) | 100-300 | - |
| Package Type | SC-70 (SOT-323) | - |
| RoHS Compliance | Yes | - |
Key Features
- General Purpose PNP Transistor: Suitable for a variety of applications including switching and amplification.
- High Collector Current: Capable of handling up to 600 mA of collector current.
- Low Power Dissipation: With a power dissipation of 150 mW, it is efficient for low-power applications.
- Compact Packaging: SC-70 (SOT-323) package makes it ideal for surface mount technology and space-constrained designs.
- RoHS Compliant: Meets environmental standards for lead-free electronics.
Applications
- Switching Circuits: Used in various switching applications due to its high collector current and low power dissipation.
- Amplifier Circuits: Suitable for amplifier stages in audio and signal processing circuits.
- Automotive Electronics: Can be used in automotive systems due to its robustness and reliability.
- Consumer Electronics: Found in a range of consumer electronic devices such as audio equipment, home appliances, and more.
Q & A
- What is the collector-base voltage (Vceo) of the MMBT4403WT1G transistor?
The collector-base voltage (Vceo) of the MMBT4403WT1G transistor is -40 V.
- What is the maximum collector current (Ic) of the MMBT4403WT1G transistor?
The maximum collector current (Ic) of the MMBT4403WT1G transistor is -600 mA.
- What is the power dissipation (Pd) of the MMBT4403WT1G transistor?
The power dissipation (Pd) of the MMBT4403WT1G transistor is 150 mW.
- What is the typical current gain (hfe) of the MMBT4403WT1G transistor?
The typical current gain (hfe) of the MMBT4403WT1G transistor is between 100 and 300.
- What package type is the MMBT4403WT1G transistor available in?
The MMBT4403WT1G transistor is available in the SC-70 (SOT-323) package.
- Is the MMBT4403WT1G transistor RoHS compliant?
Yes, the MMBT4403WT1G transistor is RoHS compliant.
- What are some common applications of the MMBT4403WT1G transistor?
The MMBT4403WT1G transistor is commonly used in switching circuits, amplifier circuits, automotive electronics, and consumer electronics.
- Why is the SC-70 package beneficial for the MMBT4403WT1G transistor?
The SC-70 package is beneficial because it is compact and suitable for surface mount technology, making it ideal for space-constrained designs.
- What is the significance of the current gain (hfe) range for the MMBT4403WT1G transistor?
The current gain (hfe) range of 100-300 indicates the transistor's ability to amplify current, making it versatile for various applications.
- How does the MMBT4403WT1G transistor contribute to environmental sustainability?
The MMBT4403WT1G transistor is RoHS compliant, meaning it meets environmental standards for lead-free electronics, contributing to sustainability.
