Overview
The MMBT4401WT1G is an NPN silicon switching transistor produced by onsemi. This device is designed for use as a medium power amplifier and switch, capable of handling collector currents up to 500 mA. It is packaged in the SC-70 (SOT-323) case, which is Pb-free, halogen-free, and RoHS compliant. The transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | 40 | Vdc |
| Collector-Base Voltage | VCBO | - | 60 | Vdc |
| Emitter-Base Voltage | VEBO | - | 6.0 | Vdc |
| Collector Current - Continuous | IC | - | 600 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | - | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 833 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C |
| DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) | hFE | 20 | 300 | - |
| Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VCE(sat) | - | 0.4 | Vdc |
| Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VBE(sat) | 0.75 | 1.2 | Vdc |
| Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) | fT | - | 250 | MHz |
| Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) | Ccb | - | 6.5 | pF |
| Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) | Ceb | - | 30 | pF |
| Delay Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) | td | - | 15 | ns |
| Rise Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) | tr | - | 20 | ns |
| Storage Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) | ts | - | 225 | ns |
| Fall Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) | tf | - | 30 | ns |
Key Features
- Moisture Sensitivity Level: 1
- ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V
- Pb-free, halogen-free, and RoHS compliant
- AEC-Q101 qualified and PPAP capable for automotive and other applications
- High DC current gain (hFE) with a range of 20 to 300
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat))
- High current-gain - bandwidth product (fT) of 250 MHz
- Low thermal resistance, junction-to-ambient (RJA) of 833 °C/W
- Wide operating temperature range from -55°C to 150°C
Applications
The MMBT4401WT1G is suitable for a variety of applications, including:
- Medium power amplifiers
- Switching applications requiring collector currents up to 500 mA
- Automotive systems due to its AEC-Q101 qualification and PPAP capability
- General-purpose amplification in electronic circuits
- High-frequency applications due to its high current-gain - bandwidth product
Q & A
- What is the maximum collector-emitter voltage for the MMBT4401WT1G?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the maximum collector current for the MMBT4401WT1G?
The maximum collector current (IC) is 600 mAdc.
- What is the thermal resistance, junction-to-ambient for the MMBT4401WT1G?
The thermal resistance, junction-to-ambient (RJA) is 833 °C/W.
- Is the MMBT4401WT1G RoHS compliant?
- What is the operating temperature range for the MMBT4401WT1G?
The operating temperature range is from -55°C to 150°C.
- What is the current-gain - bandwidth product (fT) for the MMBT4401WT1G?
The current-gain - bandwidth product (fT) is 250 MHz.
- What are the typical applications for the MMBT4401WT1G?
The MMBT4401WT1G is used in medium power amplifiers, switching applications, automotive systems, and general-purpose amplification.
- Is the MMBT4401WT1G suitable for high-frequency applications?
- What is the package type for the MMBT4401WT1G?
The MMBT4401WT1G is packaged in the SC-70 (SOT-323) case.
- Is the MMBT4401WT1G AEC-Q101 qualified?
