Overview
The MBR2H200SF is a surface mount Schottky power rectifier manufactured by ON Semiconductor. This device utilizes the Schottky Barrier principle with a large area metal-to-silicon power diode, making it ideal for low voltage, high frequency rectification. It is particularly suited for free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical. The device is well-suited for use in portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 200 | V |
| Working Peak Reverse Voltage | VRWM | 200 | V |
| Average Rectified Forward Current (TL = 108°C) | IO | 2.0 | A |
| Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 105°C) | IFRM | 4.0 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 30 | A |
| Storage and Operating Junction Temperature Range | Tstg, TJ | −55 to +150 | °C |
| Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25°C) | VF | 0.86 | V |
| Thermal Resistance, Junction-to-Lead | θJL | 23 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 85 | °C/W |
| Package Type | SOD-123FL | ||
| Lead Finish | 100% Matte Sn (Tin) | ||
| Weight | 11.7 mg (approximately) |
Key Features
- Guardring for Stress Protection
- Low Forward Voltage
- Epoxy Meets UL 94 V-0
- Package Designed for Optimal Automated Board Assembly
- Pb-Free Devices
Applications
The MBR2H200SF is typically used in AC-DC and DC-DC converters, reverse battery protection, and 'Oring' of multiple supply voltages. It is also suitable for any application where performance and size are critical, such as in portable and battery-powered products like cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.
Q & A
- What is the peak repetitive reverse voltage of the MBR2H200SF?
The peak repetitive reverse voltage (VRRM) is 200 V.
- What is the average rectified forward current of the MBR2H200SF at 108°C?
The average rectified forward current (IO) is 2.0 A at 108°C.
- What is the maximum instantaneous forward voltage of the MBR2H200SF at 1.0 A and 25°C?
The maximum instantaneous forward voltage (VF) is 0.86 V at 1.0 A and 25°C.
- What is the thermal resistance from junction to ambient for the MBR2H200SF?
The thermal resistance from junction to ambient (RθJA) is 85 °C/W.
- Is the MBR2H200SF Pb-free?
- What package type does the MBR2H200SF use?
The MBR2H200SF uses the SOD-123FL package type.
- What are some typical applications of the MBR2H200SF?
Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'Oring' of multiple supply voltages.
- What is the storage and operating junction temperature range for the MBR2H200SF?
The storage and operating junction temperature range is −55 to +150 °C.
- What is the non-repetitive peak surge current of the MBR2H200SF?
The non-repetitive peak surge current (IFSM) is 30 A.
- Is the MBR2H200SF suitable for automated board assembly?
