Overview
The MBR2H200SFT1G is a surface mount Schottky power rectifier produced by onsemi. This device utilizes the Schottky Barrier principle with a large area metal-to-silicon power diode, making it ideal for low voltage, high frequency rectification. It is also suitable for use as free-wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical.
The MBR2H200SFT1G is particularly useful in portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards due to its small size and high performance.
Key Specifications
| Specification | Value | Unit |
|---|---|---|
| Maximum Continuous Forward Current | 2.0 | A |
| Peak Reverse Repetitive Voltage | 200 | V |
| Peak Repetitive Forward Current | 4.0 | A |
| Non-Repetitive Peak Surge Current | 30 | A |
| Storage and Operating Junction Temperature Range | -55 to +150 | °C |
| Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25°C) | 0.86 | V |
| Maximum Instantaneous Reverse Current (Rated dc Voltage, TJ = 25°C) | 200 μA | A |
| Thermal Resistance, Junction-to-Ambient | 85 °C/W | °C/W |
| Package Type | SOD-123 | |
| Lead Finish | 100% Matte Sn (Tin) |
Key Features
- Guardring for Stress Protection
- Low Forward Voltage
- Epoxy meets UL 94 V-0
- Package designed for optimal automated board assembly
- Pb-Free device
- Compact size suitable for portable and battery-powered products
Applications
The MBR2H200SFT1G is versatile and can be used in various applications, including:
- AC-DC and DC-DC converters
- Reverse battery protection
- “Oring” of multiple supply voltages
- Portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards
Q & A
- What is the maximum continuous forward current of the MBR2H200SFT1G?
The maximum continuous forward current is 2.0 A.
- What is the peak reverse repetitive voltage of the MBR2H200SFT1G?
The peak reverse repetitive voltage is 200 V.
- What is the thermal resistance, junction-to-ambient, of the MBR2H200SFT1G?
The thermal resistance, junction-to-ambient, is 85 °C/W.
- Is the MBR2H200SFT1G a Pb-Free device?
- What is the operating junction temperature range of the MBR2H200SFT1G?
The operating junction temperature range is -55 to +150 °C.
- What type of package does the MBR2H200SFT1G use?
The MBR2H200SFT1G uses a SOD-123 package.
- What are some typical applications of the MBR2H200SFT1G?
Typical applications include AC-DC and DC-DC converters, reverse battery protection, and “Oring” of multiple supply voltages, as well as use in portable and battery-powered products.
- What is the maximum instantaneous forward voltage of the MBR2H200SFT1G at 1.0 A and 25°C?
The maximum instantaneous forward voltage is 0.86 V.
- What is the non-repetitive peak surge current of the MBR2H200SFT1G?
The non-repetitive peak surge current is 30 A.
- Is the MBR2H200SFT1G suitable for high-frequency rectification?
