MBR1H100SFT3G
  • Share:

onsemi MBR1H100SFT3G

Manufacturer No:
MBR1H100SFT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 1A SOD123FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR1H100SFT3G is a Schottky Power Rectifier manufactured by onsemi, designed for surface mount applications. It is rated for 1.0 A forward current and a reverse voltage of 100 V. This diode employs the Schottky barrier principle, offering a low forward voltage drop and high efficiency, making it suitable for low voltage, high-frequency rectification, as well as for use in freewheeling and polarity protection circuits. The component is packaged in a compact SOD-123FL 2-lead configuration, ideal for high-volume production and space-saving on PCBs.

Key Specifications

Specification Value Unit
Maximum Continuous Forward Current 1.0 A
Peak Reverse Repetitive Voltage 100 V
Maximum Forward Voltage Drop 0.76 V
Peak Non-Repetitive Forward Surge Current 50 A
Storage and Operating Junction Temperature Range -65 to +175 °C
Thermal Resistance, Junction-to-Ambient 85 °C/W
Package Type SOD-123FL
Mounting Type Surface Mount
Lead Finish 100% Matte Sn (Tin)
Moisture Sensitivity Level 1

Key Features

  • Low forward voltage drop (max VF of 0.76 V) for reduced power loss and improved efficiency.
  • Compact SOD-123FL 2-lead package, ideal for high-volume production and space-saving on PCBs.
  • Pb-free and epoxy molded case, adhering to environmental standards.
  • Designed for optimal automated board assembly with stress protection guarding.
  • Robust operating temperature range from -65 °C to 175 °C, suitable for harsh environments.
  • High peak repetitive reverse voltage and non-repetitive peak forward current capabilities for handling surges and high current scenarios.

Applications

The MBR1H100SFT3G can be applied in various industries due to its efficient and reliable power management capabilities. Some potential applications include:

  • Computing and Data Storage: Power supply units for computers and data storage systems where efficient power conversion is crucial.
  • Consumer Electronics: Battery charging circuits and voltage regulation modules in portable electronic devices like smartphones, tablets, and laptops.
  • Automotive: Voltage regulators, alternator diodes, or battery charging systems in automotive power systems, subject to meeting automotive standards.
  • Industrial Automation: Power supply circuits in industrial control systems requiring stable power under variable load conditions.
  • Renewable Energy Systems: Solar power inverters and wind turbine power systems where efficient power conversion is essential for maximizing energy harvest.

Note that all these applications require prior rigorous testing and validation to ensure compliance with specific industry standards and application needs.

Q & A

  1. What is the maximum continuous forward current of the MBR1H100SFT3G?

    The maximum continuous forward current is 1.0 A.

  2. What is the peak reverse repetitive voltage of the MBR1H100SFT3G?

    The peak reverse repetitive voltage is 100 V.

  3. What is the maximum forward voltage drop of the MBR1H100SFT3G?

    The maximum forward voltage drop is 0.76 V.

  4. What is the peak non-repetitive forward surge current of the MBR1H100SFT3G?

    The peak non-repetitive forward surge current is 50 A.

  5. What is the operating temperature range of the MBR1H100SFT3G?

    The operating temperature range is from -65 °C to 175 °C.

  6. What is the package type of the MBR1H100SFT3G?

    The package type is SOD-123FL.

  7. Is the MBR1H100SFT3G Pb-free?
  8. What is the moisture sensitivity level of the MBR1H100SFT3G?

    The moisture sensitivity level is 1.

  9. What are some potential applications of the MBR1H100SFT3G?

    Potential applications include computing and data storage, consumer electronics, automotive, industrial automation, and renewable energy systems.

  10. What is the thermal resistance, junction-to-ambient, of the MBR1H100SFT3G?

    The thermal resistance, junction-to-ambient, is 85 °C/W.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:760 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,033

Please send RFQ , we will respond immediately.

Same Series
MBR1H100SFT3G
MBR1H100SFT3G
DIODE SCHOTTKY 100V 1A SOD123FL

Similar Products

Part Number MBR1H100SFT3G MBR2H100SFT3G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 1A 2A
Voltage - Forward (Vf) (Max) @ If 760 mV @ 1 A 840 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 40 µA @ 100 V 40 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD