MBR1H100SFT3G
  • Share:

onsemi MBR1H100SFT3G

Manufacturer No:
MBR1H100SFT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 1A SOD123FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR1H100SFT3G is a Schottky Power Rectifier manufactured by onsemi, designed for surface mount applications. It is rated for 1.0 A forward current and a reverse voltage of 100 V. This diode employs the Schottky barrier principle, offering a low forward voltage drop and high efficiency, making it suitable for low voltage, high-frequency rectification, as well as for use in freewheeling and polarity protection circuits. The component is packaged in a compact SOD-123FL 2-lead configuration, ideal for high-volume production and space-saving on PCBs.

Key Specifications

Specification Value Unit
Maximum Continuous Forward Current 1.0 A
Peak Reverse Repetitive Voltage 100 V
Maximum Forward Voltage Drop 0.76 V
Peak Non-Repetitive Forward Surge Current 50 A
Storage and Operating Junction Temperature Range -65 to +175 °C
Thermal Resistance, Junction-to-Ambient 85 °C/W
Package Type SOD-123FL
Mounting Type Surface Mount
Lead Finish 100% Matte Sn (Tin)
Moisture Sensitivity Level 1

Key Features

  • Low forward voltage drop (max VF of 0.76 V) for reduced power loss and improved efficiency.
  • Compact SOD-123FL 2-lead package, ideal for high-volume production and space-saving on PCBs.
  • Pb-free and epoxy molded case, adhering to environmental standards.
  • Designed for optimal automated board assembly with stress protection guarding.
  • Robust operating temperature range from -65 °C to 175 °C, suitable for harsh environments.
  • High peak repetitive reverse voltage and non-repetitive peak forward current capabilities for handling surges and high current scenarios.

Applications

The MBR1H100SFT3G can be applied in various industries due to its efficient and reliable power management capabilities. Some potential applications include:

  • Computing and Data Storage: Power supply units for computers and data storage systems where efficient power conversion is crucial.
  • Consumer Electronics: Battery charging circuits and voltage regulation modules in portable electronic devices like smartphones, tablets, and laptops.
  • Automotive: Voltage regulators, alternator diodes, or battery charging systems in automotive power systems, subject to meeting automotive standards.
  • Industrial Automation: Power supply circuits in industrial control systems requiring stable power under variable load conditions.
  • Renewable Energy Systems: Solar power inverters and wind turbine power systems where efficient power conversion is essential for maximizing energy harvest.

Note that all these applications require prior rigorous testing and validation to ensure compliance with specific industry standards and application needs.

Q & A

  1. What is the maximum continuous forward current of the MBR1H100SFT3G?

    The maximum continuous forward current is 1.0 A.

  2. What is the peak reverse repetitive voltage of the MBR1H100SFT3G?

    The peak reverse repetitive voltage is 100 V.

  3. What is the maximum forward voltage drop of the MBR1H100SFT3G?

    The maximum forward voltage drop is 0.76 V.

  4. What is the peak non-repetitive forward surge current of the MBR1H100SFT3G?

    The peak non-repetitive forward surge current is 50 A.

  5. What is the operating temperature range of the MBR1H100SFT3G?

    The operating temperature range is from -65 °C to 175 °C.

  6. What is the package type of the MBR1H100SFT3G?

    The package type is SOD-123FL.

  7. Is the MBR1H100SFT3G Pb-free?
  8. What is the moisture sensitivity level of the MBR1H100SFT3G?

    The moisture sensitivity level is 1.

  9. What are some potential applications of the MBR1H100SFT3G?

    Potential applications include computing and data storage, consumer electronics, automotive, industrial automation, and renewable energy systems.

  10. What is the thermal resistance, junction-to-ambient, of the MBR1H100SFT3G?

    The thermal resistance, junction-to-ambient, is 85 °C/W.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:760 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,033

Please send RFQ , we will respond immediately.

Same Series
NRVB1H100SFT3G
NRVB1H100SFT3G
DIODE SCHOTTKY 100V 1A SOD123FL

Similar Products

Part Number MBR1H100SFT3G MBR2H100SFT3G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 1A 2A
Voltage - Forward (Vf) (Max) @ If 760 mV @ 1 A 840 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 40 µA @ 100 V 40 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5