NCV8440ASTT3G
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onsemi NCV8440ASTT3G

Manufacturer No:
NCV8440ASTT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 59V 2.6A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NCV8440ASTT3G is a protected N-Channel power MOSFET device manufactured by onsemi. This MOSFET is designed with integrated protection features, including Drain-to-Gate clamping for overvoltage protection, a diode clamp between the gate and source, and ESD protection up to 5000 V according to the Human Body Model (HBM).

Key Specifications

Characteristic Symbol Value Unit
Drain-to-Source Voltage (Internally Clamped) VDSS 52-59 V
Gate-to-Source Voltage - Continuous VGS ±15 V
Drain Current - Continuous ID 2.6 A
Drain Current - Single Pulse (tp = 10 μs) IDM 10 A
Total Power Dissipation @ TA = 25°C PD 1.69 W
Static Drain-to-Source On-Resistance RDS(on) 95-180
Gate Threshold Voltage VGS(th) 1.1-1.9 V
Operating and Storage Temperature Range TJ -40 to 150 °C
Package Type SOT-223 (Pb-Free)

Key Features

  • Integrated Drain-to-Gate clamping for overvoltage protection.
  • Diode clamp between the gate and source.
  • ESD protection up to 5000 V according to the Human Body Model (HBM).
  • Active over-voltage gate to drain clamp.
  • Internal series gate resistance.
  • Scalable to lower or higher RDS(on).

Applications

  • Solenoid drivers.
  • Lamp drivers.
  • Small motor drivers.
  • Automotive applications.

Q & A

  1. What is the NCV8440ASTT3G?

    The NCV8440ASTT3G is a protected N-Channel power MOSFET device manufactured by onsemi, featuring integrated protection such as Drain-to-Gate clamping and ESD protection.

  2. What is the maximum drain-to-source voltage of the NCV8440ASTT3G?

    The maximum drain-to-source voltage (VDSS) is 52-59 V.

  3. What is the continuous drain current rating of the NCV8440ASTT3G?

    The continuous drain current (ID) is 2.6 A.

  4. What type of ESD protection does the NCV8440ASTT3G have?

    The NCV8440ASTT3G has ESD protection up to 5000 V according to the Human Body Model (HBM).

  5. What package type is the NCV8440ASTT3G available in?

    The NCV8440ASTT3G is available in the SOT-223 (Pb-Free) package type.

  6. What are some common applications for the NCV8440ASTT3G?

    Common applications include solenoid drivers, lamp drivers, small motor drivers, and automotive applications.

  7. What is the gate threshold voltage range of the NCV8440ASTT3G?

    The gate threshold voltage (VGS(th)) range is 1.1-1.9 V.

  8. What is the operating and storage temperature range for the NCV8440ASTT3G?

    The operating and storage temperature range is -40 to 150°C.

  9. Does the NCV8440ASTT3G have internal series gate resistance?

    Yes, the NCV8440ASTT3G has internal series gate resistance.

  10. What is the maximum total power dissipation of the NCV8440ASTT3G at 25°C?

    The maximum total power dissipation (PD) at 25°C is 1.69 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):59 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3.5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:1.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 4.5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 35 V
FET Feature:- 
Power Dissipation (Max):1.69W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NCV8440ASTT3G
NCV8440ASTT3G
MOSFET N-CH 59V 2.6A SOT223
NCV8440STT1G
NCV8440STT1G
MOSFET N-CH 59V 2.6A SOT223
NCV8440STT3G
NCV8440STT3G
MOSFET N-CH 59V 2.6A SOT223

Similar Products

Part Number NCV8440ASTT3G NCV8440STT3G NCV8440ASTT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 59 V 59 V 59 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 2.6A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V 3.5V, 10V 3.5V, 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 2.6A, 10V 110mOhm @ 2.6A, 10V 110mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 1.9V @ 100µA 1.9V @ 100µA 1.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 4.5 V 4.5 nC @ 4.5 V 4.5 nC @ 4.5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 35 V 155 pF @ 35 V 155 pF @ 35 V
FET Feature - - -
Power Dissipation (Max) 1.69W (Ta) 1.69W (Ta) 1.69W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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