NTMFS5C450NLT1G
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onsemi NTMFS5C450NLT1G

Manufacturer No:
NTMFS5C450NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 27A/110A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS5C450NLT1G is a high-performance, single N-channel power MOSFET manufactured by onsemi. This device is designed to offer excellent electrical characteristics, making it suitable for a variety of power management and switching applications. The MOSFET features a compact DFN-5 (5.1x6.1) package, which is lead-free and RoHS compliant, ensuring environmental sustainability and ease of integration into modern electronic designs.

Key Specifications

ParameterValue
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)110A
Power Dissipation (Pd)68W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.8mΩ@10V,40A
PackageDFN-5 (5.1x6.1)
Assembly TypeSMT Assembly

Key Features

  • High current handling capability of up to 110A
  • Low on-resistance of 2.8mΩ at 10V and 40A, reducing power losses
  • Compact DFN-5 package for space-efficient designs
  • Lead-free and RoHS compliant for environmental sustainability
  • High power dissipation of 68W, suitable for demanding applications

Applications

The NTMFS5C450NLT1G is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-power switching circuits
  • Automotive and industrial power management systems
  • Renewable energy systems such as solar and wind power

Q & A

  1. What is the maximum drain-source voltage of the NTMFS5C450NLT1G?
    The maximum drain-source voltage is 40V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 110A.
  3. What is the on-resistance of the NTMFS5C450NLT1G at 10V and 40A?
    The on-resistance is 2.8mΩ at 10V and 40A.
  4. What type of package does the NTMFS5C450NLT1G come in?
    The NTMFS5C450NLT1G comes in a DFN-5 (5.1x6.1) package.
  5. Is the NTMFS5C450NLT1G RoHS compliant?
    Yes, the NTMFS5C450NLT1G is lead-free and RoHS compliant.
  6. What is the power dissipation capability of this MOSFET?
    The power dissipation capability is 68W.
  7. What type of assembly is used for the NTMFS5C450NLT1G?
    The assembly type is SMT (Surface Mount Technology).
  8. Where can I find the datasheet for the NTMFS5C450NLT1G?
    The datasheet can be found on the onsemi official website or through authorized distributors like Farnell and JLCPCB.
  9. What are some common applications for the NTMFS5C450NLT1G?
    Common applications include power supplies, motor control systems, high-power switching circuits, automotive and industrial power management, and renewable energy systems.
  10. How do I ensure proper thermal management for the NTMFS5C450NLT1G?
    Proper thermal management can be achieved by using appropriate heat sinks, thermal interfaces, and ensuring good PCB design practices to dissipate heat efficiently.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.7W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Part Number NTMFS5C450NLT1G NTMFS5C460NLT1G NTMFS5C456NLT1G NTMFS5C450NT1G NTMFS5C450NLT3G NTMFS5C410NLT1G NTMFS5C430NLT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 110A (Tc) 78A (Tc) 87A (Tc) 24A (Ta), 102A (Tc) 27A (Ta), 110A (Tc) 46A (Ta), 302A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 40A, 10V 4.5mOhm @ 35A, 10V 3.7mOhm @ 20A, 10V 3.3mOhm @ 50A, 10V 2.8mOhm @ 40A, 10V 0.9mOhm @ 50A, 10V 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 3.5V @ 65µA 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 23 nC @ 10 V 18 nC @ 10 V 23 nC @ 10 V 35 nC @ 10 V 143 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 20 V 1300 pF @ 20 V 1600 pF @ 25 V 1600 pF @ 25 V 2100 pF @ 20 V 8862 pF @ 25 V 4300 pF @ 20 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.7W (Ta), 68W (Tc) 3.6W (Ta), 50W (Tc) 3.6W (Ta), 55W (Tc) 3.6W (Ta), 68W (Tc) 3.7W (Ta), 68W (Tc) 3.2W (Ta), 139W (Tc) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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