Overview
The NTMFS5C430NLT1G is a single N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. With a compact DFN5 package (5x6 mm), it is ideal for space-constrained designs. The MOSFET features a drain-to-source voltage (VDSS) of 40 V, a continuous drain current (ID) of up to 200 A at 25°C, and a low on-resistance (RDS(on)) of 1.4 mΩ at 10 V. It is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 200 | A |
| Continuous Drain Current (TC = 100°C) | ID | 140 | A |
| Power Dissipation (TC = 25°C) | PD | 110 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| On-Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 1.2 - 1.4 | mΩ |
| On-Resistance (VGS = 4.5 V, ID = 50 A) | RDS(on) | 1.7 - 2.2 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 1.4 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W |
Key Features
- Compact Design: The NTMFS5C430NLT1G features a small footprint with a DFN5 package (5x6 mm), making it ideal for space-constrained applications.
- Low On-Resistance: With an RDS(on) of 1.4 mΩ at 10 V and 2.2 mΩ at 4.5 V, this MOSFET minimizes conduction losses.
- Low QG and Capacitance: The device has low total gate charge (QG(TOT)) and capacitance, which helps in minimizing driver losses.
- Pb-Free and RoHS Compliant: The MOSFET is lead-free and complies with RoHS regulations, ensuring environmental sustainability.
- High Current Handling: Capable of handling high continuous drain currents up to 200 A at 25°C.
Applications
- Power Management Systems: Suitable for high-power switching applications, including power supplies, DC-DC converters, and power management ICs.
- Automotive Systems: Can be used in automotive applications such as motor control, battery management, and other high-current systems.
- Industrial Control: Ideal for industrial control systems, including motor drives, power inverters, and other high-power electronic devices.
- Consumer Electronics: Used in high-power consumer electronics such as gaming consoles, high-end computers, and other power-intensive devices.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMFS5C430NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is up to 200 A.
- What is the on-resistance (RDS(on)) at 10 V and 50 A?
The on-resistance (RDS(on)) at 10 V and 50 A is between 1.2 mΩ and 1.4 mΩ.
- Is the NTMFS5C430NLT1G Pb-free and RoHS compliant?
Yes, the NTMFS5C430NLT1G is Pb-free and RoHS compliant.
- What is the junction-to-case thermal resistance (RθJC)?
The junction-to-case thermal resistance (RθJC) is 1.4 °C/W.
- What is the maximum operating junction temperature (TJ)?
The maximum operating junction temperature (TJ) is +175°C.
- What is the typical forward transconductance (gFS)?
The typical forward transconductance (gFS) is 180 S.
- What is the total gate charge (QG(TOT)) at VGS = 10 V and VDS = 20 V?
The total gate charge (QG(TOT)) at VGS = 10 V and VDS = 20 V is between 70 nC and 82 nC.
- What is the turn-on delay time (td(ON))?
The turn-on delay time (td(ON)) is between 15 ns and 28 ns.
- Is the NTMFS5C430NLT1G suitable for automotive applications?
Yes, the NTMFS5C430NLT1G is suitable for automotive applications due to its high current handling and robust thermal performance.
