PBSS304PZ,135
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NXP Semiconductors PBSS304PZ,135

Manufacturer No:
PBSS304PZ,135
Manufacturer:
NXP Semiconductors
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Description:
NEXPERIA PBSS304PZ - SMALL SIGNA
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Product Introduction

Overview

The PBSS304PZ,135 is a PNP low VCEsat transistor produced by Nexperia (formerly part of NXP Semiconductors). This transistor is housed in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient designs. It is known for its low collector-emitter saturation voltage, which enhances its performance in various applications requiring high current handling and low power loss.

Key Specifications

ParameterValue
Transistor TypePNP
Package TypeSOT223 (SC-73)
Collector-Base Voltage (VCB)60 V
Collector-Emitter Voltage (VCE)60 V
Emitter-Base Voltage (VEB)5 V
Collector Current (IC)4.5 A
Collector-Emitter Saturation Voltage (VCEsat)0.2 V (typical at IC = 1 A, IB = 50 mA)
Base-Emitter Saturation Voltage (VBEsat)0.7 V (typical at IC = 1 A, IB = 50 mA)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low collector-emitter saturation voltage (VCEsat) of 0.2 V, reducing power losses and improving efficiency.
  • High collector current (IC) of 4.5 A, suitable for high-current applications.
  • Compact SOT223 (SC-73) package, ideal for space-constrained designs.
  • NPN complement available as PBSS304NZ-Q.
  • Wide operating temperature range from -55°C to 150°C.

Applications

  • Automotive systems, including power management and motor control.
  • Industrial control systems, such as power supplies and motor drives.
  • Consumer electronics, including audio amplifiers and power switches.
  • General-purpose switching and amplification in various electronic circuits.

Q & A

  1. What is the collector-emitter saturation voltage (VCEsat) of the PBSS304PZ,135? The VCEsat is typically 0.2 V at IC = 1 A and IB = 50 mA.
  2. What is the maximum collector current (IC) of the PBSS304PZ,135? The maximum collector current is 4.5 A.
  3. What package type is the PBSS304PZ,135 available in? It is available in a SOT223 (SC-73) package.
  4. What is the operating temperature range of the PBSS304PZ,135? The operating temperature range is from -55°C to 150°C.
  5. Is there an NPN complement for the PBSS304PZ,135? Yes, the NPN complement is the PBSS304NZ-Q.
  6. What are some common applications of the PBSS304PZ,135? It is commonly used in automotive systems, industrial control systems, consumer electronics, and general-purpose switching and amplification.
  7. What is the base-emitter saturation voltage (VBEsat) of the PBSS304PZ,135? The VBEsat is typically 0.7 V at IC = 1 A and IB = 50 mA.
  8. How can I obtain the datasheet for the PBSS304PZ,135? You can download the datasheet from the official Nexperia website or from distributors like Digi-Key and Mouser.
  9. What is the collector-base voltage (VCB) rating of the PBSS304PZ,135? The VCB rating is 60 V.
  10. Is the PBSS304PZ,135 suitable for high-power applications? Yes, it is suitable due to its high collector current and low VCEsat.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):4.5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:375mV @ 225mA, 4.5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 2A, 2V
Power - Max:2 W
Frequency - Transition:130MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number PBSS304PZ,135 PBSS305PZ,135 PBSS306PZ,135 PBSS301PZ,135 PBSS302PZ,135 PBSS303PZ,135 PBSS304NZ,135
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type PNP PNP PNP PNP PNP PNP NPN
Current - Collector (Ic) (Max) 4.5 A 4.5 A 4.1 A 5.7 A 5.5 A 5.3 A 5.2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 100 V 12 V 20 V 30 V 60 V
Vce Saturation (Max) @ Ib, Ic 375mV @ 225mA, 4.5A 450mV @ 225mA, 4.5A 325mV @ 410mA, 4.1A 245mV @ 285mA, 5.7A 265mV @ 275mA, 5.5A 265mV @ 265mA, 5.3A 280mV @ 260mA, 5.2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 2V 120 @ 2A, 2V 100 @ 2A, 2V 200 @ 2A, 2V 200 @ 2A, 2V 250 @ 1A, 2V 250 @ 2A, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 130MHz 100MHz 100MHz 140MHz 130MHz 130MHz 130MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223 SOT-223

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