Overview
The PSMN1R4-40YLDX is a high-performance N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's NextPower-S3 series, utilizing advanced TrenchMOS Superjunction technology. It is packaged in the LFPAK56 (Power SO8) package, which is designed for high reliability and efficiency. The MOSFET is optimized for logic level gate drive and is suitable for a wide range of high-performance power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PSMN1R4-40YLD | - |
| Package | LFPAK56 (Power SO8) | - |
| Channel Type | N-channel | - |
| VDS (max) | 40 | V |
| RDSon (max) @ VGS = 10 V | 1.4 | mΩ |
| RDSon (max) @ VGS = 4.5 V; @25°C | 1.85 | mΩ |
| Tj (max) | 175 | °C |
| ID (max) | 240 | A |
| QGD (typ) | 13 | nC |
| QG(tot) (typ) @ VGS = 4.5 V | 45 | nC |
| QG(tot) (typ) @ VGS = 10 V | 96 | nC |
| Ptot (max) | 238 | W |
| VGSth (typ) | 1.7 | V |
| Ciss (typ) | 6661 | pF |
| Coss (typ) | 1543 | pF |
Key Features
- NextPower-S3 Technology: Delivers superfast switching with soft recovery, ensuring high system efficiency and low EMI designs.
- Low QRR, QG, and QGD: Optimized for high system efficiency and low EMI.
- Schottky-Plus Body-Diode: Provides soft switching without high IDSS leakage.
- Logic Level Gate Drive: Optimized for 4.5 V gate drive.
- High Reliability LFPAK Package: Features copper-clip, solder die attach, and is qualified to 175°C.
- Exposed Leads: Can be wave soldered, allowing for visual solder joint inspection and high-quality solder joints.
- Low Parasitic Inductance and Resistance: Enhances performance in high-frequency applications.
Applications
- Synchronous Rectification: Ideal for high-efficiency power conversion.
- DC-to-DC Converters: Suitable for high-performance and high-efficiency server power supplies.
- Motor Control: Used in various motor control applications requiring high current and low resistance.
- Power OR-ing: Applicable in power distribution and redundancy systems.
- Automotive and Industrial: Finds use in automotive and industrial power systems due to its high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN1R4-40YLDX?
The maximum drain-source voltage (VDS) is 40 V.
- What is the typical on-resistance (RDSon) at VGS = 10 V?
The typical on-resistance (RDSon) at VGS = 10 V is 1.4 mΩ.
- What is the maximum junction temperature (Tj) of this MOSFET?
The maximum junction temperature (Tj) is 175°C.
- What is the maximum drain current (ID) of the PSMN1R4-40YLDX?
The maximum drain current (ID) is 240 A.
- What technology is used in the PSMN1R4-40YLDX?
The PSMN1R4-40YLDX uses Nexperia's NextPower-S3 technology.
- What are the key benefits of the Schottky-Plus body-diode in this MOSFET?
The Schottky-Plus body-diode provides soft switching without high IDSS leakage.
- Is the PSMN1R4-40YLDX suitable for high-frequency applications?
Yes, it is suitable due to its low parasitic inductance and resistance.
- What are some common applications of the PSMN1R4-40YLDX?
Common applications include synchronous rectification, DC-to-DC converters, motor control, and power OR-ing.
- Is the PSMN1R4-40YLDX automotive qualified?
No, it is not specifically listed as automotive qualified, but it is widely used in various high-performance applications.
- What is the package type of the PSMN1R4-40YLDX?
The package type is LFPAK56 (Power SO8).
