Overview
The PSMN1R4-30YLDX is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's NextPowerS3 portfolio, which utilizes the unique 'SchottkyPlus' technology. This technology combines the benefits of integrated Schottky or Schottky-like diodes, such as high efficiency and low spiking performance, without the drawbacks of high leakage current.
The MOSFET is packaged in the LFPAK56 (SOT669) package, which is designed to provide excellent thermal performance and a small footprint. This makes it ideal for a variety of applications requiring high current handling and low on-state resistance.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 25 °C ≤ Tj ≤ 175 °C | - | - | 30 | V |
| VDGR (Drain-Gate Voltage) | 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ | - | - | 30 | V |
| VGS (Gate-Source Voltage) | - | -20 | - | 20 | V |
| RDSon (Drain-Source On-State Resistance) | VGS = 4.5 V; ID = 25 A; Tj = 25 °C | - | 1.44 | 1.85 | mΩ |
| RDSon (Drain-Source On-State Resistance) | VGS = 10 V; ID = 25 A; Tj = 25 °C | - | 1.11 | 1.42 | mΩ |
| ID (Continuous Drain Current) | Tc = 25 °C | - | - | 100 | A |
| Ptot (Total Power Dissipation) | Tmb = 25 °C | - | - | 166 | W |
| Tj (Junction Temperature) | - | -55 | - | 175 | °C |
| Rth(j-mb) (Thermal Resistance from Junction to Mounting Base) | - | - | 0.81 | 0.9 | K/W |
| Rth(j-a) (Thermal Resistance from Junction to Ambient) | - | - | - | 125 | K/W |
Key Features
- NextPowerS3 Technology: Utilizes Nexperia's unique 'SchottkyPlus' technology, offering high efficiency and low spiking performance without high leakage current.
- Low On-State Resistance: RDSon as low as 1.11 mΩ at VGS = 10 V and ID = 25 A.
- High Current Handling: Continuous drain current of up to 100 A.
- Compact Package: LFPAK56 (SOT669) package for excellent thermal performance and a small footprint.
- Wide Operating Temperature Range: Junction temperature range from -55 °C to 175 °C.
- RoHS Compliance: Compliant with the Restriction of Certain Hazardous Substances (RoHS) directive.
Applications
- Power Management: Suitable for various power management applications, including DC-DC converters, power supplies, and motor control systems.
- Industrial Automation: Used in industrial automation systems for high-current switching and control.
- Automotive Systems: Applicable in automotive systems requiring high reliability and efficiency.
- Consumer Electronics: Ideal for high-power consumer electronics such as gaming consoles, servers, and other high-current devices.
Q & A
- What is the maximum drain-source voltage of the PSMN1R4-30YLDX MOSFET?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical on-state resistance of the PSMN1R4-30YLDX at VGS = 10 V and ID = 25 A?
The typical on-state resistance (RDSon) is 1.11 mΩ.
- What is the continuous drain current rating of the PSMN1R4-30YLDX?
The continuous drain current (ID) is up to 100 A.
- What package type is used for the PSMN1R4-30YLDX MOSFET?
The PSMN1R4-30YLDX is packaged in the LFPAK56 (SOT669) package.
- Is the PSMN1R4-30YLDX RoHS compliant?
- What is the junction temperature range for the PSMN1R4-30YLDX?
The junction temperature range is from -55 °C to 175 °C.
- What is the thermal resistance from junction to ambient for the PSMN1R4-30YLDX?
The thermal resistance from junction to ambient (Rth(j-a)) is typically 125 K/W.
- What technology does the PSMN1R4-30YLDX use?
The PSMN1R4-30YLDX uses Nexperia's NextPowerS3 technology with 'SchottkyPlus' features.
- What are some common applications for the PSMN1R4-30YLDX?
- How can I obtain samples of the PSMN1R4-30YLDX?
