PSMN1R2-30YLDX
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Nexperia USA Inc. PSMN1R2-30YLDX

Manufacturer No:
PSMN1R2-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN1R2-30YLDX is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's NextPower technology series, designed to offer superior efficiency and reliability in various applications. The MOSFET is housed in the LFPAK56 (Power-SO8) package, which is known for its high reliability and thermal performance. It is optimized for 4.5V gate drive, making it suitable for a wide range of industrial, communications, and domestic equipment.

Key Specifications

Parameter Value Unit
Type N-Channel -
Vds (Drain to Source Voltage) 30 V
Vgs (Gate to Source Voltage) 20 V
ID (Continuous Drain Current) 100 A
Rdson (On-State Resistance) 1.25 mΩ
Pd (Total Power Dissipation) 194 W
Tj (Junction Temperature) 175 °C
Package LFPAK56 (Power-SO8) -

Key Features

  • Logic level enhancement mode N-channel MOSFET using NextPower Superjunction technology.
  • Ultra-low on-state resistance (Rdson) of 1.25 mΩ.
  • Low gate charge (QG), gate-drain charge (QGD), and output charge (QOSS) for high system efficiencies.
  • Low parasitic inductance.
  • High reliability Power SO8 package qualified to 175°C.
  • Optimized for 4.5V gate drive.

Applications

  • DC-to-DC converters.
  • Lithium-ion battery protection.
  • Load switching.
  • Power OR-ing.
  • Server power supplies.
  • Sync rectifier applications.

Q & A

  1. What is the maximum drain to source voltage of the PSMN1R2-30YLDX MOSFET?

    30 V.

  2. What is the continuous drain current rating of this MOSFET?

    100 A.

  3. What is the on-state resistance (Rdson) of the PSMN1R2-30YLDX?

    1.25 mΩ.

  4. What package type is used for the PSMN1R2-30YLDX?

    LFPAK56 (Power-SO8).

  5. What is the maximum junction temperature for this MOSFET?

    175°C.

  6. Is the PSMN1R2-30YLDX optimized for a specific gate drive voltage?

    Yes, it is optimized for 4.5V gate drive.

  7. What are some common applications for the PSMN1R2-30YLDX MOSFET?

    DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, server power supplies, and sync rectifier applications.

  8. Does the PSMN1R2-30YLDX have low parasitic inductance?

    Yes, it has low parasitic inductance.

  9. Is the PSMN1R2-30YLDX RoHS compliant?

    Yes, it is RoHS compliant.

  10. Where can I find more detailed specifications and models for the PSMN1R2-30YLDX?

    You can find detailed specifications, Spice models, and thermal models on the Nexperia website or through authorized distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.24mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4616 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):194W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN1R2-30YLDX PSMN1R4-30YLDX PSMN1R0-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.24mOhm @ 25A, 10V 1.42mOhm @ 25A, 10V 1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 54.8 nC @ 10 V 121.35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4616 pF @ 15 V 3840 pF @ 15 V 8598 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 194W (Tc) 166W (Tc) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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