Overview
The PSMN1R0-30YLDX is a high-performance N-channel MOSFET manufactured by Nexperia USA Inc. This device is part of Nexperia's NextPowerS3 portfolio, which utilizes unique SchottkyPlus technology to deliver high efficiency and low spiking performance. The MOSFET is housed in the LFPAK56 (Power-SO8) package, known for its high reliability and optimal thermal performance.
This MOSFET is designed for high-efficiency applications at high switching frequencies, making it suitable for a wide range of power management and control applications. With its logic level gate drive and ultra-low QG, QGD, and QOSS, it ensures high system efficiency and minimal energy loss.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 25°C ≤ Tj ≤ 175°C | - | - | 30 | V |
| VGS (Gate-Source Voltage) | - | -20 | - | 20 | V |
| ID (Drain Current) | VGS = 10 V; Tmb = 25°C | - | - | 300 | A |
| IDM (Peak Drain Current) | pulsed; tp ≤ 10 µs; Tmb = 25°C | - | - | 1441 | A |
| RDSon (Drain-Source On-State Resistance) | VGS = 10 V; ID = 25 A; T = 25°C | - | 1.02 | 1.3 | mΩ |
| Ptot (Total Power Dissipation) | Tmb = 25°C | - | - | 238 | W |
| Tj (Junction Temperature) | - | -55 | - | 175 | °C |
| QG(tot) (Total Gate Charge) | VGS = 4.5 V; ID = 25 A | - | 38.2 | 57.3 | nC |
Key Features
- 300 Amp Capability: The MOSFET is capable of handling high current levels, making it suitable for demanding applications.
- Avalanche Rated: 100% tested at Ias = 190 A, ensuring robustness against transient conditions.
- Ultra Low QG, QGD, and QOSS: These characteristics enhance system efficiency, especially at higher switching frequencies.
- Superfast Switching: With a soft-recovery s-factor > 1, it minimizes ringing and EMI.
- SchottkyPlus Technology: Offers Schottky-like performance with low leakage current (< 1 A at 25°C).
- Low Parasitic Inductance and Resistance: Optimized for high-frequency applications.
- High Reliability: Clip-bonded and solder die attach, qualified to 175°C.
- Wave Solderable: Exposed leads for optimal visual solder inspection.
Applications
- On-Board DC-to-DC Solutions: For server and telecommunications applications.
- Secondary-Side Synchronous Rectification: In telecommunication applications.
- Voltage Regulator Modules (VRM): And Point-of-Load (POL) modules.
- Power Delivery: For V-core, ASIC, DDR, GPU, VGA, and system components.
- Brushed and Brushless Motor Control: For various motor control applications.
- Power OR-ing: For redundant power supply systems.
Q & A
- What is the maximum drain-source voltage of the PSMN1R0-30YLDX MOSFET?
The maximum drain-source voltage (VDS) is 30 V.
- What is the maximum drain current of the PSMN1R0-30YLDX MOSFET?
The maximum drain current (ID) is 300 A at VGS = 10 V and Tmb = 25°C.
- What is the typical on-state resistance of the PSMN1R0-30YLDX MOSFET?
The typical on-state resistance (RDSon) is 1.02 mΩ at VGS = 10 V and ID = 25 A.
- What is the maximum junction temperature of the PSMN1R0-30YLDX MOSFET?
The maximum junction temperature (Tj) is 175°C.
- What is the total gate charge of the PSMN1R0-30YLDX MOSFET?
The total gate charge (QG(tot)) is typically 38.2 nC at VGS = 4.5 V.
- What technology does the PSMN1R0-30YLDX MOSFET use?
The MOSFET uses Nexperia's unique SchottkyPlus technology.
- What package type is the PSMN1R0-30YLDX MOSFET available in?
The MOSFET is available in the LFPAK56 (Power-SO8) package.
- Is the PSMN1R0-30YLDX MOSFET wave solderable?
Yes, the MOSFET has exposed leads for optimal visual solder inspection and is wave solderable.
- What are some common applications of the PSMN1R0-30YLDX MOSFET?
Common applications include on-board DC-to-DC solutions, secondary-side synchronous rectification, voltage regulator modules, and motor control.
- How does the PSMN1R0-30YLDX MOSFET minimize EMI?
The MOSFET minimizes EMI through its superfast switching and soft-recovery characteristics, which reduce ringing and spiking.
