Overview
The PSMN3R0-30YLDX is a high-performance N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This device is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique “SchottkyPlus” technology. It is packaged in the LFPAK56 package, known for its compact size and high thermal performance. The MOSFET is designed for logic level gate drive, making it suitable for a wide range of applications requiring low on-state resistance and high current handling capabilities.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 25 °C ≤ Tj ≤ 175 °C | - | - | 30 | V |
| VDGR (Drain-Gate Voltage) | 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ | - | - | 30 | V |
| VGS (Gate-Source Voltage) | - | -20 | - | 20 | V |
| RDSon (Drain-Source On-State Resistance) | VGS = 4.5 V; ID = 25 A; Tj = 25 °C | - | 3.2 | 4 | mΩ |
| RDSon (Drain-Source On-State Resistance) | VGS = 10 V; ID = 25 A; Tj = 25 °C | - | 2.57 | 3.1 | mΩ |
| Tj (Junction Temperature) | - | -55 | - | 175 | °C |
| Ptot (Total Power Dissipation) | Tmb = 25 °C | - | - | - | - |
| Rth(j-a) (Thermal Resistance from Junction to Ambient) | - | - | - | 50 | K/W |
Key Features
- Low On-State Resistance: The PSMN3R0-30YLDX features a low RDSon of 3.2 mΩ (VGS = 4.5 V) and 2.57 mΩ (VGS = 10 V), ensuring minimal power loss during operation.
- High Current Capability: This MOSFET can handle continuous currents up to 100 A, making it suitable for high-power applications.
- Logic Level Gate Drive: Designed for logic level gate drive, this MOSFET can be easily controlled by standard logic signals.
- Compact LFPAK56 Package: The device is packaged in the LFPAK56, which offers excellent thermal performance and a compact footprint.
- NextPowerS3 Technology: Utilizes Nexperia's NextPowerS3 technology, which includes “SchottkyPlus” technology for enhanced performance.
Applications
- Power Supplies: Suitable for use in high-efficiency power supplies, including switch-mode power supplies and DC-DC converters.
- Motor Control: Ideal for motor control applications due to its high current handling and low on-state resistance.
- Industrial Automation: Used in various industrial automation systems where high reliability and performance are required.
- Consumer Electronics: Can be used in consumer electronics such as power adapters, battery chargers, and other high-power devices.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN3R0-30YLDX?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical on-state resistance (RDSon) at VGS = 4.5 V?
The typical on-state resistance (RDSon) at VGS = 4.5 V is 3.2 mΩ.
- What is the maximum junction temperature (Tj) for this MOSFET?
The maximum junction temperature (Tj) is 175 °C.
- What is the package type of the PSMN3R0-30YLDX?
The package type is LFPAK56.
- What technology does the PSMN3R0-30YLDX use?
The PSMN3R0-30YLDX uses Nexperia's NextPowerS3 technology, including “SchottkyPlus” technology.
- What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage (VGS) is 20 V.
- What are the typical applications of the PSMN3R0-30YLDX?
Typical applications include power supplies, motor control, industrial automation, and consumer electronics.
- What is the thermal resistance from junction to ambient (Rth(j-a))?
The thermal resistance from junction to ambient (Rth(j-a)) is up to 50 K/W.
- Can the PSMN3R0-30YLDX be used in high-power motor control applications?
Yes, it is suitable for high-power motor control applications due to its high current handling and low on-state resistance.
- How can I obtain samples of the PSMN3R0-30YLDX?
Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.
