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PSMN2R0-30YLDX
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Nexperia USA Inc. PSMN2R0-30YLDX

Manufacturer No:
PSMN2R0-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN2R0-30YLDX is a logic level gate drive N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This MOSFET is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique “SchottkyPlus” technology. It is packaged in the LFPAK56 (Power-SO8) package, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

ParameterValue
Type NumberPSMN2R0-30YLD
PackageLFPAK56; Power-SO8 (SOT669)
Channel TypeN-channel
VDS [max]30 V
RDSon [max] @ VGS = 10 V2 mΩ
RDSon [max] @ VGS = 4.5 V; @25°C2.5 mΩ
Tj [max]175°C
ID [max]100 A
Ptot [max]142 W
QGD [typ]6.3 nC
QG(tot) [typ] @ VGS = 4.5 V21.8 nC
QG(tot) [typ] @ VGS = 10 V46 nC
Qr [typ]1.7 nC
VGSth [typ]N/A
Ciss [typ]2969 pF
Coss [typ]1477 pF

Key Features

  • Logic level gate drive for easy control.
  • NextPowerS3 technology with “SchottkyPlus” for enhanced performance and efficiency.
  • Low on-resistance (RDSon) of 2 mΩ at VGS = 10 V and 2.5 mΩ at VGS = 4.5 V.
  • High current capability of up to 100 A.
  • High power dissipation of up to 142 W.
  • Compact LFPAK56 (Power-SO8) package for space-efficient designs.
  • Automotive qualified, ensuring reliability in demanding environments.

Applications

The PSMN2R0-30YLDX MOSFET is versatile and can be used in various applications across different industries, including:

  • Automotive systems: For power management and control in vehicles.
  • Industrial systems: For motor control, power supplies, and other high-power applications.
  • Power management: In DC-DC converters, power supplies, and battery management systems.
  • Consumer electronics: For efficient power management in devices such as laptops, smartphones, and wearables.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN2R0-30YLDX MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the on-resistance (RDSon) at VGS = 10 V?
    The on-resistance (RDSon) at VGS = 10 V is 2 mΩ.
  3. What is the maximum current (ID) rating of the MOSFET?
    The maximum current (ID) rating is 100 A.
  4. What is the package type of the PSMN2R0-30YLDX MOSFET?
    The package type is LFPAK56 (Power-SO8).
  5. Is the PSMN2R0-30YLDX MOSFET automotive qualified?
    Yes, it is automotive qualified.
  6. What technology does the NextPowerS3 portfolio utilize?
    The NextPowerS3 portfolio utilizes Nexperia's unique “SchottkyPlus” technology.
  7. What is the maximum junction temperature (Tj) of the MOSFET?
    The maximum junction temperature (Tj) is 175°C.
  8. What is the typical gate-source threshold voltage (VGSth)?
    The typical gate-source threshold voltage (VGSth) is not specified.
  9. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 2969 pF, and the typical output capacitance (Coss) is 1477 pF.
  10. Where can I purchase the PSMN2R0-30YLDX MOSFET?
    You can purchase the PSMN2R0-30YLDX MOSFET from Nexperia's official distributors or online retailers like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2969 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):142W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Part Number PSMN2R0-30YLDX PSMN4R0-30YLDX PSMN3R0-30YLDX PSMN2R4-30YLDX PSMN2R0-40YLDX PSMN1R0-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 95A (Tc) 100A (Tc) 100A (Tc) 180A (Ta) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 25A, 10V 4mOhm @ 25A, 10V 3.1mOhm @ 25A, 10V 2.4mOhm @ 25A, 10V 2.1mOhm @ 25A, 10V 1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.05V @ 1mA 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 19.4 nC @ 10 V 46.4 nC @ 10 V 31.3 nC @ 10 V 92 nC @ 10 V 121.35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2969 pF @ 15 V 1272 pF @ 15 V 2939 pF @ 15 V 2256 pF @ 15 V 6581 pF @ 20 V 8598 pF @ 15 V
FET Feature - - - - Schottky Diode (Body) -
Power Dissipation (Max) 142W (Tc) 64W (Tc) 91W (Tc) 106W (Tc) 166W (Ta) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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