English
PSMN2R0-30YLDX
  • Share:

Nexperia USA Inc. PSMN2R0-30YLDX

Manufacturer No:
PSMN2R0-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN2R0-30YLDX is a logic level gate drive N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This MOSFET is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique “SchottkyPlus” technology. It is packaged in the LFPAK56 (Power-SO8) package, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

ParameterValue
Type NumberPSMN2R0-30YLD
PackageLFPAK56; Power-SO8 (SOT669)
Channel TypeN-channel
VDS [max]30 V
RDSon [max] @ VGS = 10 V2 mΩ
RDSon [max] @ VGS = 4.5 V; @25°C2.5 mΩ
Tj [max]175°C
ID [max]100 A
Ptot [max]142 W
QGD [typ]6.3 nC
QG(tot) [typ] @ VGS = 4.5 V21.8 nC
QG(tot) [typ] @ VGS = 10 V46 nC
Qr [typ]1.7 nC
VGSth [typ]N/A
Ciss [typ]2969 pF
Coss [typ]1477 pF

Key Features

  • Logic level gate drive for easy control.
  • NextPowerS3 technology with “SchottkyPlus” for enhanced performance and efficiency.
  • Low on-resistance (RDSon) of 2 mΩ at VGS = 10 V and 2.5 mΩ at VGS = 4.5 V.
  • High current capability of up to 100 A.
  • High power dissipation of up to 142 W.
  • Compact LFPAK56 (Power-SO8) package for space-efficient designs.
  • Automotive qualified, ensuring reliability in demanding environments.

Applications

The PSMN2R0-30YLDX MOSFET is versatile and can be used in various applications across different industries, including:

  • Automotive systems: For power management and control in vehicles.
  • Industrial systems: For motor control, power supplies, and other high-power applications.
  • Power management: In DC-DC converters, power supplies, and battery management systems.
  • Consumer electronics: For efficient power management in devices such as laptops, smartphones, and wearables.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN2R0-30YLDX MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the on-resistance (RDSon) at VGS = 10 V?
    The on-resistance (RDSon) at VGS = 10 V is 2 mΩ.
  3. What is the maximum current (ID) rating of the MOSFET?
    The maximum current (ID) rating is 100 A.
  4. What is the package type of the PSMN2R0-30YLDX MOSFET?
    The package type is LFPAK56 (Power-SO8).
  5. Is the PSMN2R0-30YLDX MOSFET automotive qualified?
    Yes, it is automotive qualified.
  6. What technology does the NextPowerS3 portfolio utilize?
    The NextPowerS3 portfolio utilizes Nexperia's unique “SchottkyPlus” technology.
  7. What is the maximum junction temperature (Tj) of the MOSFET?
    The maximum junction temperature (Tj) is 175°C.
  8. What is the typical gate-source threshold voltage (VGSth)?
    The typical gate-source threshold voltage (VGSth) is not specified.
  9. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 2969 pF, and the typical output capacitance (Coss) is 1477 pF.
  10. Where can I purchase the PSMN2R0-30YLDX MOSFET?
    You can purchase the PSMN2R0-30YLDX MOSFET from Nexperia's official distributors or online retailers like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2969 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):142W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.33
717

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN2R0-30YLDX PSMN4R0-30YLDX PSMN3R0-30YLDX PSMN2R4-30YLDX PSMN2R0-40YLDX PSMN1R0-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 95A (Tc) 100A (Tc) 100A (Tc) 180A (Ta) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 25A, 10V 4mOhm @ 25A, 10V 3.1mOhm @ 25A, 10V 2.4mOhm @ 25A, 10V 2.1mOhm @ 25A, 10V 1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.05V @ 1mA 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 19.4 nC @ 10 V 46.4 nC @ 10 V 31.3 nC @ 10 V 92 nC @ 10 V 121.35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2969 pF @ 15 V 1272 pF @ 15 V 2939 pF @ 15 V 2256 pF @ 15 V 6581 pF @ 20 V 8598 pF @ 15 V
FET Feature - - - - Schottky Diode (Body) -
Power Dissipation (Max) 142W (Tc) 64W (Tc) 91W (Tc) 106W (Tc) 166W (Ta) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PMEG3010BEAZ
PMEG3010BEAZ
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
BC847BS-QX
BC847BS-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC807-16LZ
BC807-16LZ
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74LVC1G74GT-Q100X
74LVC1G74GT-Q100X
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8XSON
74LVC273D,112
74LVC273D,112
Nexperia USA Inc.
NEXPERIA 74LVC273D - D FLIP-FLOP
74LVC1G80GV-Q100,1
74LVC1G80GV-Q100,1
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT SC74A
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
74HC4538PW-Q100,11
74HC4538PW-Q100,11
Nexperia USA Inc.
IC MULTIVIBRATOR 25NS 16TSSOP
74HCT154DB,112
74HCT154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP