English
PSMN2R0-30YLDX
  • Share:

Nexperia USA Inc. PSMN2R0-30YLDX

Manufacturer No:
PSMN2R0-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN2R0-30YLDX is a logic level gate drive N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This MOSFET is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique “SchottkyPlus” technology. It is packaged in the LFPAK56 (Power-SO8) package, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

ParameterValue
Type NumberPSMN2R0-30YLD
PackageLFPAK56; Power-SO8 (SOT669)
Channel TypeN-channel
VDS [max]30 V
RDSon [max] @ VGS = 10 V2 mΩ
RDSon [max] @ VGS = 4.5 V; @25°C2.5 mΩ
Tj [max]175°C
ID [max]100 A
Ptot [max]142 W
QGD [typ]6.3 nC
QG(tot) [typ] @ VGS = 4.5 V21.8 nC
QG(tot) [typ] @ VGS = 10 V46 nC
Qr [typ]1.7 nC
VGSth [typ]N/A
Ciss [typ]2969 pF
Coss [typ]1477 pF

Key Features

  • Logic level gate drive for easy control.
  • NextPowerS3 technology with “SchottkyPlus” for enhanced performance and efficiency.
  • Low on-resistance (RDSon) of 2 mΩ at VGS = 10 V and 2.5 mΩ at VGS = 4.5 V.
  • High current capability of up to 100 A.
  • High power dissipation of up to 142 W.
  • Compact LFPAK56 (Power-SO8) package for space-efficient designs.
  • Automotive qualified, ensuring reliability in demanding environments.

Applications

The PSMN2R0-30YLDX MOSFET is versatile and can be used in various applications across different industries, including:

  • Automotive systems: For power management and control in vehicles.
  • Industrial systems: For motor control, power supplies, and other high-power applications.
  • Power management: In DC-DC converters, power supplies, and battery management systems.
  • Consumer electronics: For efficient power management in devices such as laptops, smartphones, and wearables.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN2R0-30YLDX MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the on-resistance (RDSon) at VGS = 10 V?
    The on-resistance (RDSon) at VGS = 10 V is 2 mΩ.
  3. What is the maximum current (ID) rating of the MOSFET?
    The maximum current (ID) rating is 100 A.
  4. What is the package type of the PSMN2R0-30YLDX MOSFET?
    The package type is LFPAK56 (Power-SO8).
  5. Is the PSMN2R0-30YLDX MOSFET automotive qualified?
    Yes, it is automotive qualified.
  6. What technology does the NextPowerS3 portfolio utilize?
    The NextPowerS3 portfolio utilizes Nexperia's unique “SchottkyPlus” technology.
  7. What is the maximum junction temperature (Tj) of the MOSFET?
    The maximum junction temperature (Tj) is 175°C.
  8. What is the typical gate-source threshold voltage (VGSth)?
    The typical gate-source threshold voltage (VGSth) is not specified.
  9. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 2969 pF, and the typical output capacitance (Coss) is 1477 pF.
  10. Where can I purchase the PSMN2R0-30YLDX MOSFET?
    You can purchase the PSMN2R0-30YLDX MOSFET from Nexperia's official distributors or online retailers like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2969 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):142W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.33
717

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN2R0-30YLDX PSMN4R0-30YLDX PSMN3R0-30YLDX PSMN2R4-30YLDX PSMN2R0-40YLDX PSMN1R0-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 95A (Tc) 100A (Tc) 100A (Tc) 180A (Ta) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 25A, 10V 4mOhm @ 25A, 10V 3.1mOhm @ 25A, 10V 2.4mOhm @ 25A, 10V 2.1mOhm @ 25A, 10V 1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.05V @ 1mA 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 19.4 nC @ 10 V 46.4 nC @ 10 V 31.3 nC @ 10 V 92 nC @ 10 V 121.35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2969 pF @ 15 V 1272 pF @ 15 V 2939 pF @ 15 V 2256 pF @ 15 V 6581 pF @ 20 V 8598 pF @ 15 V
FET Feature - - - - Schottky Diode (Body) -
Power Dissipation (Max) 142W (Tc) 64W (Tc) 91W (Tc) 106W (Tc) 166W (Ta) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PMEG2002AESFBYL
PMEG2002AESFBYL
Nexperia USA Inc.
DIODE SCHTKY 20V 200MA DSN0603B2
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC807-16LZ
BC807-16LZ
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP