English
PSMN2R0-30YLDX
  • Share:

Nexperia USA Inc. PSMN2R0-30YLDX

Manufacturer No:
PSMN2R0-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN2R0-30YLDX is a logic level gate drive N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This MOSFET is part of the NextPowerS3 portfolio, which utilizes Nexperia's unique “SchottkyPlus” technology. It is packaged in the LFPAK56 (Power-SO8) package, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

ParameterValue
Type NumberPSMN2R0-30YLD
PackageLFPAK56; Power-SO8 (SOT669)
Channel TypeN-channel
VDS [max]30 V
RDSon [max] @ VGS = 10 V2 mΩ
RDSon [max] @ VGS = 4.5 V; @25°C2.5 mΩ
Tj [max]175°C
ID [max]100 A
Ptot [max]142 W
QGD [typ]6.3 nC
QG(tot) [typ] @ VGS = 4.5 V21.8 nC
QG(tot) [typ] @ VGS = 10 V46 nC
Qr [typ]1.7 nC
VGSth [typ]N/A
Ciss [typ]2969 pF
Coss [typ]1477 pF

Key Features

  • Logic level gate drive for easy control.
  • NextPowerS3 technology with “SchottkyPlus” for enhanced performance and efficiency.
  • Low on-resistance (RDSon) of 2 mΩ at VGS = 10 V and 2.5 mΩ at VGS = 4.5 V.
  • High current capability of up to 100 A.
  • High power dissipation of up to 142 W.
  • Compact LFPAK56 (Power-SO8) package for space-efficient designs.
  • Automotive qualified, ensuring reliability in demanding environments.

Applications

The PSMN2R0-30YLDX MOSFET is versatile and can be used in various applications across different industries, including:

  • Automotive systems: For power management and control in vehicles.
  • Industrial systems: For motor control, power supplies, and other high-power applications.
  • Power management: In DC-DC converters, power supplies, and battery management systems.
  • Consumer electronics: For efficient power management in devices such as laptops, smartphones, and wearables.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN2R0-30YLDX MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the on-resistance (RDSon) at VGS = 10 V?
    The on-resistance (RDSon) at VGS = 10 V is 2 mΩ.
  3. What is the maximum current (ID) rating of the MOSFET?
    The maximum current (ID) rating is 100 A.
  4. What is the package type of the PSMN2R0-30YLDX MOSFET?
    The package type is LFPAK56 (Power-SO8).
  5. Is the PSMN2R0-30YLDX MOSFET automotive qualified?
    Yes, it is automotive qualified.
  6. What technology does the NextPowerS3 portfolio utilize?
    The NextPowerS3 portfolio utilizes Nexperia's unique “SchottkyPlus” technology.
  7. What is the maximum junction temperature (Tj) of the MOSFET?
    The maximum junction temperature (Tj) is 175°C.
  8. What is the typical gate-source threshold voltage (VGSth)?
    The typical gate-source threshold voltage (VGSth) is not specified.
  9. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 2969 pF, and the typical output capacitance (Coss) is 1477 pF.
  10. Where can I purchase the PSMN2R0-30YLDX MOSFET?
    You can purchase the PSMN2R0-30YLDX MOSFET from Nexperia's official distributors or online retailers like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2969 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):142W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.33
717

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN2R0-30YLDX PSMN4R0-30YLDX PSMN3R0-30YLDX PSMN2R4-30YLDX PSMN2R0-40YLDX PSMN1R0-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 95A (Tc) 100A (Tc) 100A (Tc) 180A (Ta) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 25A, 10V 4mOhm @ 25A, 10V 3.1mOhm @ 25A, 10V 2.4mOhm @ 25A, 10V 2.1mOhm @ 25A, 10V 1.02mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.05V @ 1mA 2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 19.4 nC @ 10 V 46.4 nC @ 10 V 31.3 nC @ 10 V 92 nC @ 10 V 121.35 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2969 pF @ 15 V 1272 pF @ 15 V 2939 pF @ 15 V 2256 pF @ 15 V 6581 pF @ 20 V 8598 pF @ 15 V
FET Feature - - - - Schottky Diode (Body) -
Power Dissipation (Max) 142W (Tc) 64W (Tc) 91W (Tc) 106W (Tc) 166W (Ta) 238W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
BC847CW-QX
BC847CW-QX
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP