FDMT80060DC
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onsemi FDMT80060DC

Manufacturer No:
FDMT80060DC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 43A/292A 8DUAL
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FDMT80060DC is an N-Channel Power MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This MOSFET integrates Dual CoolTM package technology, enhancing thermal performance and efficiency. It is designed for high-power applications, offering superior electrical and thermal characteristics.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Continuous Drain Current (Id) at Ta43 A
Continuous Drain Current (Id) at Tc292 A
Power Dissipation (Pd) at Ta3.2 W
Power Dissipation (Pd) at Tc156 W
Package TypeSurface Mount 8-Dual Cool™88

Key Features

  • Advanced PowerTrench® process for improved performance
  • Dual CoolTM package technology for enhanced thermal management
  • High voltage rating of 60 V
  • High continuous drain current capabilities
  • Low on-resistance for reduced power losses
  • Surface mount package for ease of integration

Applications

The FDMT80060DC is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • Aerospace and defense systems
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the voltage rating of the FDMT80060DC MOSFET?
    The voltage rating of the FDMT80060DC MOSFET is 60 V.
  2. What is the continuous drain current at ambient temperature (Ta) for the FDMT80060DC?
    The continuous drain current at ambient temperature (Ta) is 43 A.
  3. What is the continuous drain current at case temperature (Tc) for the FDMT80060DC?
    The continuous drain current at case temperature (Tc) is 292 A.
  4. What is the power dissipation at ambient temperature (Ta) for the FDMT80060DC?
    The power dissipation at ambient temperature (Ta) is 3.2 W.
  5. What is the power dissipation at case temperature (Tc) for the FDMT80060DC?
    The power dissipation at case temperature (Tc) is 156 W.
  6. What package type does the FDMT80060DC use?
    The FDMT80060DC uses a Surface Mount 8-Dual Cool™88 package.
  7. What are the key benefits of the PowerTrench® process used in the FDMT80060DC?
    The PowerTrench® process provides improved performance and reduced on-resistance.
  8. What is the significance of Dual CoolTM package technology in the FDMT80060DC?
    Dual CoolTM package technology enhances thermal management, allowing for more efficient heat dissipation.
  9. In what types of applications is the FDMT80060DC commonly used?
    The FDMT80060DC is commonly used in power supplies, DC-DC converters, motor control systems, industrial automation, aerospace, and automotive systems.
  10. Where can I find detailed specifications and datasheets for the FDMT80060DC?
    Detailed specifications and datasheets for the FDMT80060DC can be found on the onsemi website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:43A (Ta), 292A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 43A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:238 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20170 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-Dual Cool™88
Package / Case:8-PowerVDFN
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Similar Products

Part Number FDMT80060DC FDMT80080DC FDMT80040DC
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V 40 V
Current - Continuous Drain (Id) @ 25°C 43A (Ta), 292A (Tc) 36A (Ta), 254A (Tc) 420A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 8V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 43A, 10V 1.35mOhm @ 36A, 10V 0.56mOhm @ 64A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 238 nC @ 10 V 273 nC @ 10 V 338 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20170 pF @ 30 V 20720 pF @ 40 V 26110 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 3.2W (Ta), 156W (Tc) 3.2W (Ta), 156W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-Dual Cool™88 8-Dual Cool™88 8-Dual Cool™88
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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