Overview
The FDMT80080DC is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process and Dual CoolTM package technologies. This combination offers the lowest RDS(on) while maintaining excellent switching performance and low Junction-to-Ambient thermal resistance. The device is designed for high efficiency and reliability, making it suitable for various power management applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain to Source Voltage (VDS) | 80 | V |
Gate to Source Voltage (VGS) | ±20 | V |
Continuous Drain Current at TC = 25°C | 254 | A |
Continuous Drain Current at TC = 100°C | 160 | A |
Pulsed Drain Current | 1453 | A |
Power Dissipation at TC = 25°C | 156 | W |
Operating and Storage Junction Temperature Range | −55 to +150 | °C |
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 36 A | 1.35 | mΩ |
Static Drain-Source On-Resistance (RDS(on)) at VGS = 8 V, ID = 31 A | 1.82 | mΩ |
Thermal Resistance, Junction-to-Ambient (RθJA) | 38 | °C/W |
Key Features
- Advanced PowerTrench® process for low RDS(on) and high efficiency
- Dual CoolTM package for enhanced thermal performance
- Next Generation Enhanced Body diode technology for soft recovery
- Low profile 8x8mm MLP package
- MSL1 Robust Package Design
- 100% UIL tested
- Pb-Free, Halide Free, and RoHS Compliant
Applications
- OringFET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMT80080DC?
The maximum drain to source voltage (VDS) is 80 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current at TC = 25°C is 254 A.
- What is the static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 36 A?
The static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 36 A is 1.35 mΩ.
- What are the typical applications of the FDMT80080DC?
The typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.
- Is the FDMT80080DC RoHS compliant?
- What is the operating and storage junction temperature range of the FDMT80080DC?
The operating and storage junction temperature range is −55 to +150 °C.
- What is the thermal resistance, junction-to-ambient (RθJA) of the FDMT80080DC?
The thermal resistance, junction-to-ambient (RθJA) is 38 °C/W.
- Does the FDMT80080DC use advanced package and silicon technologies?
- What is the package type of the FDMT80080DC?
The package type is Dual CoolTM 88, 8x8mm MLP.
- Is the FDMT80080DC 100% UIL tested?