FDMT80080DC
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onsemi FDMT80080DC

Manufacturer No:
FDMT80080DC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 36A/254A 8DUAL
Delivery:
Payment:
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Product Introduction

Overview

The FDMT80080DC is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process and Dual CoolTM package technologies. This combination offers the lowest RDS(on) while maintaining excellent switching performance and low Junction-to-Ambient thermal resistance. The device is designed for high efficiency and reliability, making it suitable for various power management applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDS) 80 V
Gate to Source Voltage (VGS) ±20 V
Continuous Drain Current at TC = 25°C 254 A
Continuous Drain Current at TC = 100°C 160 A
Pulsed Drain Current 1453 A
Power Dissipation at TC = 25°C 156 W
Operating and Storage Junction Temperature Range −55 to +150 °C
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 36 A 1.35
Static Drain-Source On-Resistance (RDS(on)) at VGS = 8 V, ID = 31 A 1.82
Thermal Resistance, Junction-to-Ambient (RθJA) 38 °C/W

Key Features

  • Advanced PowerTrench® process for low RDS(on) and high efficiency
  • Dual CoolTM package for enhanced thermal performance
  • Next Generation Enhanced Body diode technology for soft recovery
  • Low profile 8x8mm MLP package
  • MSL1 Robust Package Design
  • 100% UIL tested
  • Pb-Free, Halide Free, and RoHS Compliant

Applications

  • OringFET / Load Switching
  • Synchronous Rectification
  • DC-DC Conversion

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMT80080DC?

    The maximum drain to source voltage (VDS) is 80 V.

  2. What is the continuous drain current at TC = 25°C?

    The continuous drain current at TC = 25°C is 254 A.

  3. What is the static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 36 A?

    The static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 36 A is 1.35 mΩ.

  4. What are the typical applications of the FDMT80080DC?

    The typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.

  5. Is the FDMT80080DC RoHS compliant?
  6. What is the operating and storage junction temperature range of the FDMT80080DC?

    The operating and storage junction temperature range is −55 to +150 °C.

  7. What is the thermal resistance, junction-to-ambient (RθJA) of the FDMT80080DC?

    The thermal resistance, junction-to-ambient (RθJA) is 38 °C/W.

  8. Does the FDMT80080DC use advanced package and silicon technologies?
  9. What is the package type of the FDMT80080DC?

    The package type is Dual CoolTM 88, 8x8mm MLP.

  10. Is the FDMT80080DC 100% UIL tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:36A (Ta), 254A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:1.35mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:273 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20720 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-Dual Cool™88
Package / Case:8-PowerVDFN
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Similar Products

Part Number FDMT80080DC FDMT80040DC FDMT80060DC
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 254A (Tc) 420A (Tc) 43A (Ta), 292A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 6V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 1.35mOhm @ 36A, 10V 0.56mOhm @ 64A, 10V 1.1mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 273 nC @ 10 V 338 nC @ 10 V 238 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20720 pF @ 40 V 26110 pF @ 20 V 20170 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 3.2W (Ta), 156W (Tc) 156W (Tc) 3.2W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-Dual Cool™88 8-Dual Cool™88 8-Dual Cool™88
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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