MBRM140T3G
  • Share:

onsemi MBRM140T3G

Manufacturer No:
MBRM140T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 1A POWERMITE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRM140T3G is a Schottky Power Rectifier produced by onsemi, utilizing the Schottky Barrier principle with a barrier metal and epitaxial construction. This design optimizes the forward voltage drop-reverse current tradeoff, making it highly efficient. The advanced packaging techniques result in a micro miniature, space-saving surface mount rectifier. With its unique heatsink design, the Powermite series offers the same thermal performance as the SMA package but is 50% smaller in footprint area and has one of the lowest height profiles in the industry, at less than 1.1 mm. This component is ideal for use in portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V
Average Rectified Forward Current IO 1.0 A
Peak Repetitive Forward Current IFRM 2.0 A
Non-Repetitive Peak Surge Current IFSM 50 A
Storage Temperature Tstg -55 to 150 °C
Operating Junction Temperature TJ -55 to 125 °C
Maximum Instantaneous Forward Voltage (TJ = 25°C, IF = 1.0 A) VF 0.36 V
Thermal Resistance, Junction-to-Ambient Rtja 277 °C/W
ESD Ratings: Human Body Model > 16000 V
ESD Ratings: Machine Model > 400 V
AEC-Q101 Qualified Yes

Key Features

  • Low Profile: Maximum height of 1.1 mm.
  • Small Footprint: Footprint area of 8.45 mm².
  • Low VF: Provides higher efficiency and extends battery life.
  • Thermal Performance: Same thermal performance as SMA package but 50% smaller in footprint area.
  • ESD Ratings: Human Body Model > 16000 V, Machine Model > 400 V.
  • AEC-Q101 Qualified: Suitable for automotive and other critical applications.
  • Pb-Free Package: Compliant with RoHS standards.

Applications

The MBRM140T3G is suitable for a variety of applications where performance and size are critical. These include:

  • Portable and battery-powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs, and PCMCIA cards.
  • AC-DC and DC-DC converters.
  • Reverse battery protection.
  • 'Oring' of multiple supply voltages.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRM140T3G?

    The peak repetitive reverse voltage (VRRM) is 40 V.

  2. What is the average rectified forward current of the MBRM140T3G?

    The average rectified forward current (IO) is 1.0 A.

  3. What is the maximum instantaneous forward voltage at 1.0 A and 25°C?

    The maximum instantaneous forward voltage (VF) at 1.0 A and 25°C is 0.36 V.

  4. Is the MBRM140T3G AEC-Q101 qualified?

    Yes, the MBRM140T3G is AEC-Q101 qualified, making it suitable for automotive and other critical applications.

  5. What are the ESD ratings for the MBRM140T3G?

    The ESD ratings are > 16000 V for the Human Body Model and > 400 V for the Machine Model.

  6. What is the thermal resistance, junction-to-ambient, for the MBRM140T3G?

    The thermal resistance, junction-to-ambient (Rtja), is 277 °C/W.

  7. Is the MBRM140T3G Pb-Free?

    Yes, the MBRM140T3G is Pb-Free and compliant with RoHS standards.

  8. What are typical applications for the MBRM140T3G?

    Typical applications include AC-DC and DC-DC converters, reverse battery protection, and 'Oring' of multiple supply voltages, as well as portable and battery-powered products.

  9. What is the maximum height of the MBRM140T3G package?

    The maximum height of the package is 1.1 mm.

  10. What is the footprint area of the MBRM140T3G package?

    The footprint area is 8.45 mm².

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:550 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 40 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-216AA
Supplier Device Package:Powermite
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.49
910

Please send RFQ , we will respond immediately.

Same Series
MBRM140T1G
MBRM140T1G
DIODE SCHOTTKY 40V 1A POWERMITE
NRVBM140T1G
NRVBM140T1G
DIODE SCHOTTKY 40V 1A POWERMITE
NRVBM140T3G
NRVBM140T3G
DIODE SCHOTTKY 40V 1A POWERMITE

Similar Products

Part Number MBRM140T3G MBRS140T3G MBRM140T3H MBRM140T1G MBRM140T3
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 40 V 40 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 550 mV @ 1 A 600 mV @ 1 A 550 mV @ 1 A 550 mV @ 1 A 550 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 40 V 1 mA @ 40 V 500 µA @ 40 V 500 µA @ 40 V 500 µA @ 40 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-216AA DO-214AA, SMB DO-216AA DO-216AA DO-216AA
Supplier Device Package Powermite SMB Powermite Powermite Powermite
Operating Temperature - Junction -55°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A