Overview
The onsemi MBRS130T3G is a Schottky Barrier Rectifier that employs the Schottky Barrier principle in a large area metal-to-silicon power diode. This device features state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlap contact. It is ideally suited for low voltage, high frequency rectification, as well as for use as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Peak Repetitive Reverse Voltage | VRRM | 30 | V |
Average Rectified Forward Current (TL = 115°C) | IF(AV) | 1.0 | A |
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 40 | A |
Operating Junction Temperature | TJ | −65 to +125 | °C |
Maximum Instantaneous Forward Voltage (iF = 1.0 A, TJ = 25°C) | VF | 0.6 | V |
Thermal Resistance, Junction-to-Lead (TL = 25°C) | RθJL | 12 | °C/W |
Case | Epoxy, Molded | ||
Weight | 95 mg (approximately) | ||
Finish | All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable | ||
Lead and Mounting Surface Temperature for Soldering Purposes | 260°C Max. for 10 Seconds |
Key Features
- Small Compact Surface Mountable Package with J-Bend Leads: Ideal for applications where space is limited.
- Rectangular Package for Automated Handling: Facilitates efficient manufacturing processes.
- Highly Stable Oxide Passivated Junction: Ensures reliability and stability in operation.
- Very Low Forward Voltage Drop: 0.6 Volts Max @ 1.0 A, TJ = 25°C, reducing power losses.
- Excellent Ability to Withstand Reverse Avalanche Energy Transients: Enhances durability and robustness.
- Guardring for Stress Protection: Protects the device from stress and potential damage.
- Pb-Free Package: Compliant with environmental regulations and standards.
Applications
The MBRS130T3G is suitable for a variety of applications, including:
- Low Voltage, High Frequency Inverters: Ideal for rectification in high-frequency applications.
- Free Wheeling Diodes: Used to protect against back EMF in inductive loads.
- Polarity Protection Diodes: Ensures correct polarity in circuit applications.
- Automotive and Industrial Applications: AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other demanding environments.
Q & A
- What is the peak repetitive reverse voltage of the MBRS130T3G?
30 V
- What is the average rectified forward current of the MBRS130T3G at TL = 115°C?
1.0 A
- What is the maximum instantaneous forward voltage of the MBRS130T3G at iF = 1.0 A and TJ = 25°C?
0.6 V
- What is the thermal resistance, junction-to-lead, of the MBRS130T3G at TL = 25°C?
12 °C/W
- Is the MBRS130T3G Pb-Free?
- What is the operating junction temperature range of the MBRS130T3G?
−65 to +125 °C
- What is the non-repetitive peak surge current of the MBRS130T3G?
40 A
- What type of package does the MBRS130T3G come in?
Epoxy, Molded SMB (DO-214AA) package
- Is the MBRS130T3G suitable for automotive applications?
- What is the weight of the MBRS130T3G?
Approximately 95 mg